Globalfoundries Singapore Pte. Ltd.

Peng Zhou

Huang Liu

Alex See

Soh Yun Siah

Liang Li

Xue Song Rao

Disclosed herein are various methods of protecting elevated polysilicon structures during etching processes. In one example, the method includes forming a layer stack above a semiconducting substrate for a memory device, forming a protective mask layer above the layer stack of the memory device and performing at least one etching process to define a gate electrode for a transistor while the protective mask is in position above the layer stack for the memory device.

Growing community of inventors

Singapore, Singapore

Peng Zhou