L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Advanced Technology Materials, Inc.

American Air Liquide, Inc.

Entegris, Inc.

Voltaix, LLC

Air Liquide Advanced Materials, Inc.

Peng Zhang

Gennadiy Itov

Antonio Sanchez

Manish Khandelwal

Jean-Marc Girard

Matthew Damien Stephens

Jeffrey A Barnes

Reno Pesaresi

Sean Kerrigan

Glenn Kuchenbeiser

David Orban

Cole Ritter

Emanuel Israel Cooper

Karl E Boggs

Jun Liu

Yang Wang

Grigory Nikiforov

Zhiwen Wan

Guillaume Husson

Prerna Sonthalia

David Angst

Nicolas Blasco

Steven Lippy

Larry Kit-wing Leung

Tianniu Chen

Brian L Benac

Yumin Liu

Melissa A Petruska

Rekha Rajaram

Fabrizio Marchegiani

Nicole E Thomas

Steven Medd

Laisheng Sun

Lin Feng

Gennadily Itov

Xiaodong Yan

Fan Qin

Thomas J Larrabee

Shrane Ning Jenq

Jean Marc Girard

Genaadiy Itov

Jeffrey Barnes

Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula(SiH(NR)X)N(SiHX),wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n&#x2265;1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C-Clinear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR']; further wherein each R&#x2032; of the [SiR&#x2032;] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C-Csaturated or unsaturated hydrocarbyl group, a C-Csaturated or unsaturated alkoxy group, or an amino group [&#x2014;NRR] with each Rand Rbeing further selected from H or a C-Clinear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d&#x2260;0; or d=0, c&#x2260;0.

Si-containing film forming precursors and methods of using the same

Compounds and method of preparation of Si&#x2014;X and Ge&#x2014;X compounds (X&#x2550;N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si&#x2014;H and a X&#x2014;H moiety to form a Si&#x2014;X containing compound and hydrogen gas (X&#x2550;N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The &#x2014;Si&#x2014;X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.

Halogen free syntheses of aminosilanes by catalytic dehydrogenative coupling

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N&#x2014;H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N&#x2014;H free repeating units having the formula [&#x2014;N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Perhydropolysilazane compositions and methods for forming oxide films using same

Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N&#x2014;SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two &#x2014;SiH&#x2014; moieties, either as terminal groups (&#x2014;SiHR) or embedded in a carbosilane cyclic compound, wherein R is H, a C-Clinear, branched, or cyclic alkyl- group, a C-Clinear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

Cureable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane

Si-containing film forming compositions are disclosed comprising a precursor having the formula [&#x2014;NR&#x2014;RRSi&#x2014;(CH)&#x2014;SiRR&#x2014;]wherein n=2 to 400; R, R, R, R, and Rare independently H, a hydrocarbon group, or an alkylamino group, and provided that at least one of R, R, R, and Ris H; and R is independently H, a hydrocarbon group, or a silyl group. Exemplary pre-cursors include, but are not limited to, [&#x2014;NH&#x2014;SiH&#x2014;CH&#x2014;SiH&#x2014;], and [&#x2014;N(SiH&#x2014;CH&#x2014;SiH)&#x2014;SiH&#x2014;CH&#x2014;SiH&#x2014;].

Si-containing film forming compositions and methods of making and using the same

Compounds and method of preparation of Si&#x2014;X and Ge&#x2014;X compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si&#x2014;H and a X&#x2014;H moiety to form a Si&#x2014;X containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(O) on carbon, Pd(O) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The &#x2014;Si&#x2014;X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si&#x2014;containing films.

Solid or liquid N&#x2014;H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [&#x2014;N(SiH)(SiH&#x2014;)], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

N&#x2014;H free and Si-rich per-hydridopolysilzane compositions, their synthesis, and applications

Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula(SiH(NR)X)N(SiHX),wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n&#x2265;1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C-Clinear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR']; further wherein each R&#x2032; of the [SiR&#x2032;] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C-Csaturated or unsaturated hydrocarbyl group, a C-Csaturated or unsaturated alkoxy group, or an amino group [&#x2014;NRR] with each Rand Rbeing further selected from H or a C-Clinear or branched, saturated or unsaturated hydrocarbyl group.

Methods of synthesizing Si&#x2014;H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

Preparation of Si-H containing iodosilanes via halide exchange reaction

N&#x2014;H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Post chemical mechanical polishing formulations and method of use

Halogen free amine substituted trisilylamine and tridisilylamine compounds and a method of their preparation via dehydrogenative coupling between the corresponding unsubstituted trisilylames and amines catalyzed by transition metal catalysts is described. This new approach is based on the catalytic dehydrocoupling of a Si&#x2014;H and a N&#x2014;H moiety to form an Si&#x2014;N containing compound and hydrogen gas. The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The &#x2014;Si&#x2014;N containing products are halide free. Such compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si containing films.

Amine substituted trisilylamine and tridisilylamine compounds and synthesis methods thereof

Compounds and method of preparation of Si&#x2014;X and Ge&#x2014;X compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si&#x2014;H and a X&#x2014;H moiety to form a Si&#x2014;X containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The &#x2014;Si&#x2014;X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH)N&#x2014;SiH&#x2014;X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C-Csaturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Growing community of inventors

Montvale, NJ, United States of America

Peng Zhang