Advanced Optoelectronic Technology, Inc.

Peng-Yi Wu

Po-Min Tu

Shih-Cheng Huang

Wen-Yu Lin

Shih-Hsiung Chan

Ying-Chao Yeh

Chia-Hui Shen

Chih-Pang Ma

Tzu-Chien Hong

A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer.

Semiconductor optoelectronic structure with increased light extraction efficiency

A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer.

Light-emitting semiconductor device having sub-structures for reducing defects of dislocation therein

A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength.

Method for manufacturing polychromatic light emitting diode device having wavelength conversion layer made of semiconductor

Growing community of inventors

Hsinchu, Taiwan

Peng-Yi Wu