Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Helioeast Science & Technology Co., Ltd.

Helioeast Pharmaceutical Co., Ltd.

Jumbo Drug Bank Co., Ltd.

Zhuhai Ortus Biotechnology Co., Ltd.

Peng Yang

Jian Li

Shuhui Chen

Bo Li

Lingyun Wu

Lele Zhao

Chen Zhang

Xiawei Wei

Lin Liu

Jialei Liu

Wei Zheng

Ning Jiang

Xu You

Ruizhi Tang

Jinyu Fu

Haojun Huang

Nan Shen

Fei Xing

Xiangrui Song

Disclosed are a series of benzo 2-azaspiro[4.4]nonane compounds, and specifically disclosed are a compound as represented by formula (P) or a pharmaceutically acceptable salt thereof.

Benzo 2-azaspiro[4.4]nonane compound and use thereof

A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes: providing a substrate; forming a dummy gate structure including a dummy gate dielectric layer, an initial dummy gate electrode layer, and a first sidewall spacer; forming an isolation layer having a surface lower than or coplanar with the dummy gate structure; forming a dummy gate electrode layer having a surface lower than the isolation layer, and forming a first opening to expose a portion of the first sidewall spacer; forming a modified sidewall spacer from the exposed first sidewall spacer; forming a second opening by removing the dummy gate electrode layer; forming a third opening by removing the dummy gate dielectric layer and the modified sidewall spacer, where top of the third opening has a size larger than bottom of the third opening; and forming a gate structure in the third opening.

Semiconductor structure and fabrication method thereof

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Shanghai, China

Peng Yang