Shanghai Jiaotong University

Seagate Technology Incorporated

Avago Technologies General IP (singapore) Pte. Ltd.

Fudan University

Dow Global Technolgoies LLC

Rohm and Haas Company

Delta Electronics, Inc.

Shanghai Public Health Clinical Center

Shanghai Yizhe Biotechnology Co., Ltd.

Huadao (shanghai) Biopharma Co., Ltd.

Akzo Nobel Coatings International B.v.

Peng Xu

Zhe Li

Xiuchen Jiang

Yadong Liu

Xiaofei Fu

Lei Su

Ling Pei

Yingjie Yan

Wei Zhang

Dongping Wu

Shi-Li Zhang

Siheng Xiong

LiZhao Ma

Nanshan Shu

Da Jin

Yujiang Wang

Dong Yun

Jian Sun

Jianqing Xu

Fei Guo

Jiangang Wu

Rong Yuan

Xuejun Yu

Zhimin Dong

Li Zhao Ma

Zhenyan Li

Alex Ga Hing Tang

Qian Jiang

Wenqiang Yu

Cheng Lian

Hailin Wang

Dongge Feng

Dehuan Qi

Yongjun Fang

Xiangbiao Zhou

Yingyi Ju

Martin W Murray

The present disclosure provides a fully enclosed cell culture system, including at least an incubator, a bioreactor, a gas flow assembly, a liquid flow assembly, a temperature adjustment assembly, and a central controller. The system realizes a thermostatic incubation environment. Cells are incubated by perfusion, and a fully enclosed integrated process from cell activation, infection and amplification to finished product harvesting is achieved. By axially stirring the cells and an incubation liquid in a tank body, a radial shear force is reduced, which effectively protects the cells and improves the cell yield. In the system of the present disclosure, gases are separately introduced, ensuring that the content of each gas component is stable in the incubation process. The cell incubation is not directly affected by changes of outside gases in the cell incubation process, which improves culture efficiency.

Fully enclosed cell culture system

The present invention provides a target sequence of an RNA virus. The target sequence is a nucleic acid sequence fragment in the gene sequence in the RNA virus containing 20-40 bases and having not less than 95% similarity to genome sequence of human or related species such as livestock and poultry. The above-mentioned target sequence of the RNA virus is selected from SEQ ID NO. 1-SEQ ID NO. 615. The present invention also relates to a primer composition for constructing the above-mentioned target sequence, biomaterials such as antisense RNA related to the above-mentioned target sequence, and related uses such as design of a vaccine lacking the target sequence. The virus fragment with the above-mentioned sequence constructed in the present invention has the function of interacting with human genomic DNA and is similar to viral miRNA. Moreover, the effect of overexpression of the target sequence of the RNA virus on the expression level of surrounding genes is verified, and a new concept that the above-mentioned target fragment is an important pathogenic substance of the RNA virus is proposed. The above-mentioned target sequence has important application value for the detection and diagnosis of RNA viruses, drug screening, as well as the treatment of diseases caused by RNA viruses and the design/optimization of vaccines and methods.

Target sequence of RNA virus and use thereof

A heterogeneous image registration method includes: performing edge detection on collected images, in combination with a curvature scale space strategy to extract contour curved segments in an edge image. Implementing a feature point detection strategy based on global and local curvature detecting feature points in the contour curved segments, and obtaining the nearest minimum local curvature of the feature points pointing to starting and end points of the contour, respectively. Calculating the number of neighborhood sampling points and neighborhood auxiliary feature points of neighborhoods on both edges of each of the feature points according to the nearest minimum local curvature. Using neighborhood auxiliary feature points and feature points to form a feature triangle, calculating an angle bisector vector and a main direction corresponding to the feature point in the feature triangle. The present invention is remarkable, accurate, and has high adaptability to the image registration scene of electric equipment.

Heterogeneous image registration method and system

The present invention provides a high-precision identification method and system for substations, including building a Mask RCNN objection recognition network model based on convolutional neural networks; inputting acquired image information of a object into the Mask RCNN object recognition network model for preliminary recognition and outputting a recognition result of the object; using an information entropy to create a semantic decision tree and correcting the recognition result of the object according to a principle of relative correlation between different objects and outputting a final recognition decision result; reading the recognition decision result to obtain a true type of the object to be recognized. The present invention greatly improves the accuracy of image recognition of substations, and has a positive role in the research and development of automatic inspection equipment for inspection robots.

High-precision identification method and system for substations

The present disclosure provide a method for identifying power equipment targets based on human-level concept learning, including: creating a dataset of power equipment images, and annotating power equipment in power equipment images; training neural network and Bayesian network with the annotated dataset and respectively acquire identification results and conditional probabilities; calculating probabilities of unions with the conditional probabilities; and filtering the identification result corresponding to the highest probability of the union as identification result of the dataset of the power equipment images and complete the identification of the power equipment. The present disclosure combines Mask R-CNN and probabilistic graphical model. The bottom layer uses Mask R-CNN, and the top layer uses Bayesian network to train in identifying power equipment images, so that a small amount of data samples can achieve good recognition, which improved the performance of Mask R-CNN model.

Method for identifying power equipment targets based on human-level concept learning

A power conversion device is provided. The power conversion device includes N power conversion circuits and M magnetic components, where N and M are positive integers greater than 1. Each of the N power conversion circuits includes M inductors. DC currents flowing through the M inductors respectively are unequal. Each one of the M inductors in different ones of the N power conversion circuits corresponds to each other to form a group of N corresponding inductors. In the N power conversion circuits, DC currents respectively flowing through the corresponding inductors are equal. Each of the M magnetic components includes a middle pillar, N side pillars and two substrates. The middle pillar has an air gap. In the N power conversion circuits, windings of N corresponding inductors are respectively wound around the N side pillars of one of the M magnetic components.

Power conversion device

This invention relates to a process for preparing multi-color dispersions and the multi-color dispersions made thereof.

Process for preparing multi-color dispersions and multi-color dispersions made thereof

A recycling method for a solid state drive is disclosed. The method includes selecting a logical block for recycle wherein the logical block includes a plurality of pages across a plurality of flash dies. The method also includes retrieving an address map index record associated with the logical block selected for recycle. For each particular address map index stored in the address map index record, the recycling method retrieves a set of address map entries referenced by the particular address map index, determines whether any page in the logical block is referenced by the set of address map entries, and if at least one page in the logical block is referenced by the set of address map entries, the method writes the at least one page to a different logical block. The method further includes erasing the plurality of pages in the logical block.

Tracking and utilizing second level map index for recycling of solid state drive blocks

An ultra-shallow junction semiconductor field-effect transistor and its methods of making are disclosed. In the present disclosure, a mixture film is formed on a semiconductor substrate with a gate structure formed thereon using a physical vapor deposition (PVD) process, which employs a mixture of metal and semiconductor dopants as a target. The PVD process is followed by annealing, during which ultra-shallow junctions and ultra-thin metal silicide are formed. After removing the mixture film remaining on the semiconductor substrate, an ultra-shallow junction semiconductor field-effect transistor is formed. Because the mixture film comprises metal and semiconductor dopants, ultra-shallow junctions and ultra-thin metal silicide can be formed in a same annealing process. The ultra-shallow junction thus formed can be used in semiconductor field-effect transistors for the 14 nm, 11 nm, or even further technology node.

Ultra-shallow junction semiconductor field-effect transistor and method of making

An apparatus having a processor and an interface to a nonvolatile memory having a plurality of blocks is disclosed. The processor is configured to (i) monitor a number of reads since a respective erase in at least one of the blocks in the nonvolatile memory, (ii) move a page from a first block to a second block in response to the number of reads exceeding a first threshold where the first block is partially programmed and (iii) move the page from the first block to the second block in response to the number of reads exceeding a second threshold where the first block is fully programmed. The first threshold is less than the second threshold.

Read disturb handling in NAND flash

A data storage device flushes newly written data in response to certain events such that, when the device has acknowledged newly written data, the device cannot return old data of the referenced logical block address to the host in any case. If the data of the logical block address has been corrupted, the device returns an uncorrectable error, not old data. A 'force map entry flush' flushes modified map entries to NAND when an upper page is programmed. After a power failure and restoration, a storage device is able to analysis map entries to determine whether there is some host data in the uncorrectable die, then prevent return of old data to a host.

Forced map entry flush to prevent return of old data

A solid state drive and a method for providing active recycling for the solid state drive are disclosed. The solid state drive includes a plurality of blocks and each of the plurality of blocks includes a plurality of pages. The method steps include receiving a read request from a data requester; identifying at least one page containing data requested by the read request; determining whether the at least one page belongs to a block identified for active recycling; writing the at least one page to a different block when the at least one page belongs to the block identified for active recycling; and sending the at least one page to the data requester in response to the read request.

Active recycling for solid state drive

A metal silicide thin film and ultra-shallow junctions and methods of making are disclosed. In the present disclosure, by using a metal and semiconductor dopant mixture as a target, a mixture film is formed on a semiconductor substrate using a physical vapor deposition (PVD) process. The mixture film is removed afterwards by wet etching, which is followed by annealing to form metal silicide thin film and ultra-shallow junctions. Because the metal and semiconductor dopant mixture is used as a target to deposit the mixture film, and the mixture film is removed by wet etching before annealing, self-limiting, ultra-thin, and uniform metal silicide film and ultra-shallow junctions are formed concurrently in semiconductor field-effect transistor fabrication processes, which are suitable for field-effect transistors at the 14 nm, 11 nm, or even further technology node.

Metal silicide thin film, ultra-shallow junctions, semiconductor device and method of making

Growing community of inventors

Shanghai, China

Peng Xu