Shenzhen Royole Technologies Co., Ltd.

Royole Corporation

Zte Corporation

Peng Wei

Xiaojun Yu

Zihong Liu

Ze Yuan

Jigang Zhao

Xin Chen

Xiang Zou

Yu Zhou

Xiaoyu Sun

Haojun Luo

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A method for fabricating a flexible electronic device, including the steps of: providing channels on a rigid substrate; adhering a flexible substrate to the rigid substrate with an adhesive; fabricating an electronic device on the flexible substrate; injecting a chemical substance into the channels; and reacting the chemical substance with the adhesive and peeling the flexible substrate from the rigid substrate. The rigid substrate comprises a first surface, a second surface opposite the first surface, and a side wall extending between the first surface and the second surface. The channels are provided on the first surface of the rigid substrate. The channels are in communication with an injection port, the injection port is located on the side wall of the rigid substrate, and a portion of the side wall is located between the injection port and the first surface.

Substrate and method for fabricating flexible electronic device and rigid substrate

This application discloses a flexible substrate device that includes a flexible substrate and a plurality of electronic devices. The flexible substrate includes a top surface and a bottom surface opposite to the top surface, and the plurality of electronic devices formed on the top surface of the flexible substrate. The bottom surface further includes one or more strong adhesion regions and one or more normal adhesion regions that are distinct from the one or more strong adhesion regions. Each of the one or more strong adhesion regions and the one or more normal adhesion regions are configured to attach to a rigid carrier with first adhesion strength and second adhesion strength, respectively. The first adhesion strength is substantially larger than the second adhesion strength. In some embodiments, the flexible substrate device is a thin film transistor (TFT) device, and the plurality of electronic devices includes a TFT array.

Support and detachment of flexible substrates

A capacitive touchscreen includes a substrate and a transparent conductive layer arranged on the substrate. The conductive layer includes a sensing area. The sensing area has a first side and a second side opposite to the first side. The capacitive touchscreen further includes multiple transparent and conductive first electrodes, multiple transparent and conductive second electrodes, and transparent and nonconductive patterns. Each first electrode includes a first trunk extending from the first side toward the second side. Each second electrode includes a second trunk and a wiring coupled to the second trunk. Both the second trunk and the wiring extend from the first side toward the second side, and each second trunk cooperates with a corresponding first trunks to be operable to sense a touched position. The transparent and nonconductive patterns are located between the first and second electrodes to electrically isolate the first electrodes from the second electrodes.

Capacitive touchscreen and manufacturing method thereof

This application discloses a method of forming a flexible substrate using a detachment apparatus. The flexible substrate includes a debonding region, and one or more edge regions located in proximity to one or more edges of the flexible substrate. The detachment apparatus detaches the one or more edge regions of the flexible substrate from a rigid carrier that is configured to support the flexible substrate device, and detach the debonding region of the flexible substrate from the rigid carrier to which a bottom surface of the debonding region is configured to adhere. Specifically, the detachment apparatus detaches the debonding region by contacting the top surface of the flexible substrate at a plurality of suction locations located on the debonding region of the flexible substrate, and applying detachment force at the plurality of suction locations to peel the flexible substrate off the rigid carrier.

Manufacturing apparatus for flexible electronics

A thin film transistor (TFT) array substrate structure based on organic light-emitting diodes (OLEDs) may include multiple sets of TFT components, capacitors, common electrodes, and data signal lines, all of which are formed on a substrate. Each set of TFT components includes a driving TFT, and the driving TFT has a gate, a source, and a drain. A drain frame extends from the drain and surrounds a pixel block of the TFT array substrate structure, and a transparent conductive film is arranged in a region surrounded by the drain frame and is in contact with the drain frame.

TFT array substrate structure based on OLED

A thin film transistor (TFT) device is provided. The TFT device includes a first conductive layer including a gate electrode and a connection pad. The TFT device further includes a first dielectric layer covering the gate electrode, and a semiconductor layer disposed on the dielectric layer and overlapping the gate electrode. The TFT device further includes a second dielectric layer disposed on the semiconductor layer and the first dielectric layer so as to expose first and second portions of the semiconductor layer and the connection pad. The TFT device further includes a second conductive layer which includes a source electrode portion covering the first portion of the semiconductor layer; a pixel electrode portion extending to the source electrode portion; a drain electrode portion covering the second portion of the semiconductor layer; and an interconnection portion disposed on the connection pad and extending to the drain electrode portion.

Thin film transistor, display, and method for fabricating the same

The present invention is suitable to the field of electronic technology, and provides a method of manufacturing a thin film transistor and a pixel unit thereof, wherein when the thin film transistor is manufactured, the gate metal layer is used as a mask, and exposed from the back of the substrate to position the channel and the source and drain of the thin film transistor, so that the channel is self-aligned with the gate, and the source and drain are self-aligned with the gate and are symmetrical, and the thin film transistor thus manufactured has a small parasitic capacitance, and the circuit manufactured therewith is fast in operation, and less prone to occurring short circuit or open circuit. In the present invention, the characteristics that the channel is self-aligned with the gate, and the source and drain are self-aligned with the gate and are symmetrical avoid the alignment precision requirement on the mask plate in the production, thus reducing the need for the high precision lithographic apparatus, and reducing the costs and increasing the yield. In addition, the present process is suitable for manufacturing a pixel unit of a thin film transistor, the manufacturing process only requires four mask sets which do not require the critical alignment. As compared with other four mask processes which use the gray tone masks, the present process can increase the yield and reduce the costs.

Method for manufacturing thin film transistor and pixel unit thereof

A substrate-less display device is disclosed. The substrate-less display device includes a barrier stack. The barrier stack includes a plurality of inorganic barrier films and a plurality of polymer films. The inorganic barrier films and the polymer films are alternatively disposed. The substrate-less display device further includes a thin-film-transistor (TFT) device layer disposed on the barrier stack, a display medium layer disposed on the TFT device layer, and an encapsulation layer disposed on the display medium layer.

Substrate-less flexible display and method of manufacturing the same

The present invention is applicable to the field of display technologies and provides a tiled OLED display, and the tiled OLED display includes an OLED front panel and a single-structure TFT driving backplane, where a protection substrate is disposed on a light-emitting side of the OLED front panel; the OLED front panel includes multiple OLED front panel units that are tiled to each other; and the OLED front panel unit is joined to the TFT driving backplane by using conductive film. In the present invention, by tiling the OLED front panel on the TFT backplane, production efficiency and a yield rate of the display are improved, thereby reducing a cost. By tiling the OLED front panel, a tiling gap is narrowed, thereby implementing seamless tiling. Compared with a traditional structure that uses an optical lens to eliminate a tiling gap, the yield rate of the tiled display is improved. By joining the OLED front panel to the TFT driving backplane by using the conductive film, a display aperture ratio is improved, and a problem that it is difficult to control alignment precision and stability is poor is overcome.

Tiled OLED display and manufacturing method thereof

The present invention provides a method of manufacturing a thin film transistor pixel unit, comprising: forming a metal oxide layer, a gate insulating layer, a gate metal layer and an etching barrier layer on a substrate, wherein the metal oxide layer is in a thin film transistor region; through a same mask, etching a part of the etching barrier layer, the gate metal layer and the gate insulating layer on the substrate for forming a gate region, source and drain regions for forming contact vias, a gate interface region, and a storage capacitor region, respectively. Through additional steps including etching, metallizing, and filling, a source contact via is formed in the source region, a drain contact via is formed in the drain region, and a connecting contact via is formed in the gate interface region, respectively.

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Shenzhen, China

Peng Wei