Lam Research Corporation

Peng Wang

Bhaskar Nagabhirava

Michael Goss

Prabhakara Gopaladasu

Adarsh Basavalingappa

Eric A Hudson

Stefan Schmitz

Randolph F Knarr

Ananth Indrakanti

Phil Friddle

A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.

Method for selectively etching with reduced aspect ratio dependence

A method for selectively etching trenches in a silicon oxide containing layer with an organic planarization layer is provided. Processing the silicon oxide layer comprises a plurality of process cycles, wherein each etch cycle comprises a deposition phase, comprising providing a flow of a deposition phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio, providing a constant RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase and an etch phase, comprising providing a flow of an etch phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio that is higher than the fluorine to carbon ratio of the deposition phase gas, providing a pulsed RF power, which forms the etch phase gas into a plasma, and stopping the etch phase.

Method for selectively etching silicon oxide with respect to an organic mask

A method of etching self-aligned contact/via features in a low-k dielectric layer disposed below a hardmask, which is disposed below a planarization layer. At least one cycle is provided, where each cycle comprises thinning the planarization layer, forming a deposition layer on the hardmask and planarization layer; and etching the low-k dielectric layer masked by the deposition layer.

Method for forming self-aligned contacts/vias with high corner selectivity

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Clifton Park, NY, United States of America

Peng Wang