Sungrow Power Supply Co., Ltd.

Tsinghua University

Changxin Memory Technologies, Inc.

Hefei Zezhong City Intelligent Technology Co., Ltd.

Operation and Monitoring Center for Hefei Urban Safety & Security

Operation and Monitorina Center for Hefei Urban Safety & Security

Peng Wang

Jun Xu

Jiacai Zhuang

Bing Zhang

Peng Wen

Hongyong Yuan

Guofeng Su

Ming Fu

Yang Wang

Shangfang Dai

Peng Chen

Bing Hu

Houlai Geng

Guangteng Long

Xiaofeng Xu

Jinhu Cao

Tan Shen

Qiong Tan

Wei Bie

Youping Zhu

Lingshun Xu

Weihao Wang

Zhengxing Wang

The present disclosure relates to the field of integrated circuit technologies, and provides a method and device for testing an SR cycle as well as a method and device for testing an AR number. The method for testing an SR cycle includes: executing a preset number of data-retention-capacity acquisition steps, the data-retention-capacity acquisition step including determining a preset refresh time; sending an SR entry command to control a memory to enter an SR operation; sending an SR exit command to control the memory to exit the SR operation after the memory executes the SR for the preset refresh time; detecting a current data retention capacity of the memory; obtaining a cycle of a function of the data retention capacity with respect to the corresponding preset refresh time; and determining the SR cycle of the memory with the cycle of the function.

Method and device for testing sr cycle as well as method and device for testing ar number

The present application relates to a semiconductor memory training method and related devices, belonging to the technical field of semiconductors. The method comprises: obtaining a stored historical training result of a semiconductor memory, the historical training result comprising a historical expected delay value and a historical expected voltage; setting a delay threshold and a current training voltage range, the delay threshold being less than or equal to the historical expected delay value, the current training voltage range comprising the historical expected voltage; obtaining a current minimum delay value for the semiconductor memory under the historical expected voltage; and using the stored historical training result as a current training result of the semiconductor memory, if the current minimum delay value for the semiconductor memory under the historical expected voltage is no less than the delay threshold.

Semiconductor memory training method and related device

A method for controlling shutdown wave blocking of a multilevel inverter circuit and an application apparatus for applying the method are provided. After a shutdown command is issued, the multilevel inverter circuit is controlled to switch between a free state and a specific turn-on state. The free state is a state in which all switch tubes in the multilevel inverter circuit are turned off. The specific turn-on state is a state in which voltage stress withstood by a switch tube, on which clamping protection is not performed, in the multilevel inverter circuit is zero by controlling a specific combination of switch tubes in the multilevel inverter circuit to be turned on.

Method for controlling shutdown wave blocking of multilevel inverter circuit and application thereof

The present disclosure provides a method and a device for detecting a fault of a monitoring device. The method includes: obtaining monitoring data at a preset sampling period, wherein the monitoring data comprises monitoring values respectively corresponding to a plurality of sampling points; calculating a monitoring value change rate between each monitoring value and a following monitoring value based on the preset sampling period; performing normalization processing on each monitoring value to obtain a normalized monitoring value corresponding to each monitoring value; determining a first number of monitoring values each having the monitoring value change rate greater than a preset change rate threshold and the normalized monitoring value greater than a preset monitoring value threshold; judging whether the first number is less than a first preset number threshold; and determining that the monitoring device has a fault if no.

Method and device for detecting fault of monitoring device

A method and an apparatus for real-time data analysis of water pipe network are proposed. The method includes: step S1: obtaining a current flow data xto be identified, where i is a positive integer greater than or equal to 2; step S2: determining whether a first difference between the current flow data xto be identified and a previous identified flow data xadjacent to the current flow data xto be identified is less than or equal to a preset threshold; step S3: determining whether a second difference between a next to-be-identified flow data xadjacent to the current flow data xto be identified and the previous identified flow data xis less than or equal to the preset threshold in response to the first difference being greater than the preset threshold.

Method and apparatus for real-time data analysis of water pipe network

A multi-level boost apparatus. Voltage allocation among N first switches is achieved by arranging the N voltage dividing modules. It is prevented that the second one to the N-th one of the first switches break down and fail due to overvoltage. By arranging an (i&#x2212;1)-th clamp branch at a common node between an (i&#x2212;1)-th second switch and an i-th second switch, a voltage bore by the i-th second switch is clamped at a difference between a voltage across the fourth branch (namely, an output voltage of the multi-level boost apparatus) and a voltage across the corresponding clamp branch. The risk is avoided that a second one to the N-th one of the second switches break down due to overvoltage at an instant of being powered, in a case that the input voltage is low.

Multi-level boost apparatus

A multi-level boost apparatus. Voltage allocation among N first switches is achieved by connecting N voltage dividing modules, sequentially connected in series, in parallel with the N first voltage switches, respectively. Thereby, a voltage across each of the N first switches is within a safety range. Even if an input voltage is high and a voltage across a flying capacitor is zero at an instant of being powered, it is prevented that a second one to an N-th one of the N first switches break down due to overvoltage.

A five-level inverter and its application circuit are provided. The five-level inverter is enabled to output multiple levels of voltage by controlling different conduction combinations of first, second, third, fourth, fifth, sixth, seventh, and eighth switch transistors, as well as a clamping capacitor. Two conduction combinations may be selected for outputting a positive voltage, with currents flowing through the clamping capacitor in opposite directions in the two conduction combinations. Therefore the voltage of the clamping capacitor can be balanced by controlling the two conduction combinations. Similarly, when outputting a negative voltage, the voltage of the clamping capacitor can be balanced by controlling other two conduction combinations. Therefore, a balance of power capacitor voltage can be achieved at full power and full modulation without adding an extra hardware circuit.

Five-level inverter and application circuit of the same

Provided are a method and a device for controlling an operation of an inverter. The method includes: determining whether a direct current side voltage of the inverter is greater than an operation voltage setting threshold; and if no, controlling the inverter to operate according to a five level control strategy; and if yes: adjusting the direct current side voltage by using a maximum power tracking algorithm; adjusting linearly a floating capacitor voltage of the inverter based on the adjusted direct current side voltage; determining whether the adjusted floating capacitor voltage is in a preset range; and if yes, controlling the inverter to operate according to a five level control strategy; and if no, controlling the inverter to operate according to a seven level control strategy.

Method and device for controlling operation of inverter

Growing community of inventors

Anhui, China

Peng Wang