L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Air Liquide Electronics U.S. LP

American Air Liquide, Inc.

Peng Shen

Nathan Stafford

Chih-Yu Hsu

Christian Dussarrat

Vincent M Omarjee

Rahul Gupta

Curtis Anderson

Jiro Yokota

Keiichiro Urabe

Takashi Teramoto

Nicolas Gosset

Ayaka Nishiyama

A method for storage and supply of a F3NO-free FNO-containing gas comprises the steps of storing the F3NO-free FNO-containing gas in a NiP coated steel cylinder with a polished inner surface, releasing the F3NO-free FNO-containing gas from the cylinder to a manifold assembly by activating a cylinder valve in fluid communication with the cylinder and the manifold assembly, de-pressurizing the F3NO-free FNO-containing gas by activating a pressure regulator in the manifold assembly so as to divide the manifold assembly into a first pressure zone upstream of the pressure regulator and a second pressure zone downstream of the pressure regulator, and feeding the de-pressurized F3NO-free FNO-containing gas to a target reactor downstream of the second pressure zone.

Systems and methods for storage and supply of F3NO-free FNO gases and F3NO-free FNO gas mixtures for semiconductor processes

Methods for fabricating a 3D NAND flash memory are disclosed. The method includes the steps of forming a hardmask pattern on the hardmask layer, and using the hardmask pattern to form apertures in the alternating layers by selectively plasma etching the alternating layers versus the hardmask layer using a hydrofluorocarbon etching gas selected from the group consisting of 1,1,1,3,3,3-hexafluoropropane (CHF), 1,1,2,2,3,3-hexafluoropropane (iso-CHF), 1,1,1,2,3,3,3-heptafluoropropane (CHF), and 1,1,1,2,2,3,3-heptafluoropropane (iso-CHF), wherein the first etching layer comprises a material different from that of the second etching layer.

Chemistries for etching multi-stacked layers

Methods for minimizing sidewall damage during low k etch processes are disclosed. The methods etch the low k layers f using the plasma activated vapor of an organofluorine compound having a formula selected from the group consisting of N&#x2261;C&#x2014;R; (N@C&#x2014;)&#x2014;(R)&#x2014;(&#x2014;C&#x2261;N); Rx[-C&#x2550;N(Rz)]y; and R(3-a)-N&#x2014;Ha, wherein a=1-2, x=1-2, y=1-2, z=0-1, x+z=1-3, and each R independently has the formula HaFbCc with a=0-11, b=0-11, and c=0-5.

Methods for minimizing sidewall damage during low k etch processes

Replacement chemistries for the cCFpassivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CHF, with 1&#x2264;x&#x3c;7, 1&#x2264;y&#x2264;13, and 1&#x2264;z&#x2264;13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Chemistries for TSV/MEMS/power device etching

Methods for isotropic etching at least a portion of a silicon-containing layer on a sidewall of high-aspect-ratio (HAR) apertures formed on a substrate in a reaction chamber are disclosed. The HAR aperture formed by plasma etching a stack of alternating layers of a first silicon-containing layer and a second silicon-containing layer, the second silicon-containing layer is different from the first silicon-containing layer. The method comprising the steps of: a) introducing a fluorine containing etching gas selected from the group consisting of nitrosyl fluoride (FNO), trifluoroamine oxide (FNO), nitryl fluoride (FNO) and combinations thereof into the reaction chamber; and b) removing at least a portion of the second silicon-containing layers by selectively etching the second silicon-containing layers versus the first silicon-containing layers with the fluorine containing etching gas to produce recesses between the first silicon-containing layers on the sidewall of the HAR aperture. Alternatively, the disclosed etching processes are cyclic etching processes.

SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications

Methods for minimizing plasma-induced sidewall damage during low k etch processes are disclosed. The methods etch the low k layers using the plasma activated vapor of an organofluorine compound having a formula selected from the group consisting of N&#x2261;C&#x2014;R; (N&#x2261;C&#x2014;)&#x2014;(R)&#x2014;(&#x2014;C&#x2261;N); R[&#x2014;C&#x2550;N(R)]; and R&#x2014;N&#x2014;H, wherein a=1-2, x=1-2, y=1-2, z=0-1, x+z=1-3, and each R independently has the formula HFCwith a=0-11, b=0-11, and c=0-5.

Methods of minimizing plasma-induced sidewall damage during low K etch processes

Replacement chemistries for the cCFpassivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CHF, with 1 &#x2266;x&#x3c;7, 1&#x2266;y&#x2266;13, and 1&#x2266;z&#x2266;13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Growing community of inventors

Tsukuba, Japan

Peng Shen