Asml Netherlands B.v.

Intel Corporation

Apple Inc.

Synopsys, Inc.

Emc IP Holding Company LLC

Xilinx, Inc.

Vce IP Holding Company LLC

Brion Technologies, Inc.

Vce IP Holding LLC

Peng Liu

Yu Long Cao

Jun Ye

Luoqi Chen

Michael R Tan

Yen-Wen Lu

Gilbert Lau

Vivek K Singh

Rafael C Howell

Roshni Biswas

Akshaya Mahapatra

Onur E Tackin

Oren M Elrad

Richard Kirchhofer

Yannick L Sierra

Ahmer Ali Khan

Alexandre Da Veiga

Samuel David Post

Hervé Sibert

Hua-Yu Liu

Ynn-Pyng Tsaur

Matthias Lerch

Youri Johannes Laurentius Maria Van Dommelen

Bin Hu

Rahul Narayan Singh

Robert K Molholm

Ya Luo

Biju Shanmugham Pillai

David H Huang

Alexander G Berardino

Zuo Xia

Timothy R Pease

Teun R Baar

Aiqin Jiang

Elizabeth Pieri

Wenjin Huang

David M Cook

Sameer Lokray

Xiaoqiong Wu

Michael Matthew M Crouse

Luogi Chen

A layout geometry of a lithographic mask is received. The layout geometry includes at least one shape having one or more rounded corners. The layout geometry is partitioned into a plurality of feature images, for example as selected from a library. The feature images include at least one mask corner rounding (MCR)-corrected feature image that accounts for the rounded corners of the shape. The feature images have corresponding mask 3D (M3D) filters, which represent the electromagnetic scattering effect of that feature image for a given source illumination. The mask function contribution from each of the feature images is calculated by convolving the feature image with its corresponding M3D filter. The mask function contributions are combined to determine a mask function for the mask illuminated by the source illumination.

Mask corner rounding effects in three-dimensional mask simulations using feature images

In some aspects, an integrated model accounts for effects from both the mask fabrication process and the wafer lithography process. The aerial image incident on the wafer, the pattern printed on the wafer, and/or measures of the foregoing are estimated using an integrated three-dimensional mask (M3D) model, as follows. The shapes in the mask fabrication description are partitioned into feature images. Each feature image is convolved with a corresponding M3D filter. The M3D filter represents an electromagnetic scattering effect of that feature image in the wafer lithography process, and the feature image and/or M3D filter account for effects on the layout geometry from the mask fabrication process. This is done without estimating the mask pattern printed on the lithographic mask. The mask fabrication description is modified based on differences between the estimated lithography results and corresponding target results.

Mask synthesis integrating mask fabrication effects and wafer lithography effects

In an exemplary process, a set of parameters corresponding to characteristics of a physical setting of a user is obtained. Based on the parameters, at least one display placement value and a fixed boundary location corresponding to the physical setting are obtained. In accordance with a determination that the at least one display placement value satisfies a display placement criterion, a virtual display is displayed at the fixed boundary location corresponding to the physical setting.

Displaying a virtual display

A tensor-based computing platform performs mask synthesis. A method includes accessing a layout of a lithographic mask and estimating a printed pattern resulting from use of the lithographic mask in a lithographic process. The lithographic process is modeled by a sequence of at least two forward models. A first of the forward models uses the layout of the lithographic mask as input and a last of the forward models produces the estimated printed pattern as output. The method further includes modifying the layout of the lithographic mask based on differences between the estimated printed pattern and a target printed pattern. All of the forward models are implemented on the tensor-based computing platform.

Mask synthesis using tensor-based computing platforms

A head-mounted device may include a camera that captures a live video feed of an environment. A display in the head-mounted device may display passthrough display content that includes the live video feed. Control circuitry may dynamically adjust a maximum allowable brightness for the passthrough display content during operation of the head-mounted device. Upon an initial donning of the head-mounted device, the passthrough display content may be permitted to use most or all of the achievable brightness range of the display. After a given time period, the user may be adapted to the brightness range of the display and the maximum allowable brightness for the passthrough display content may be reduced to allow additional headroom for rendered display content. The control circuitry may continue to adjust tone mappings for passthrough display content and rendered display content based on whether the display content favors real-world content or virtual content.

Electronic devices with dynamic brightness ranges for passthrough display content

A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

Methods of determining scattering of radiation by structures of finite thicknesses on a patterning device

A layout geometry of a lithographic mask is received. The layout geometry is partitioned into feature images, for example as selected from a library. The library contains predefined feature images and their corresponding precalculated mask 3D (M3D) filters. The M3D filter for a feature image represents the electromagnetic scattering effect of that feature image for a given source illumination. The mask function contribution from each of the feature images is calculated by convolving the feature image with its corresponding M3D filter. The mask function contributions are combined to determine a mask function for the lithographic mask illuminated by the source illumination.

Three-dimensional mask simulations based on feature images

A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

Three-dimensional mask model for photolithography simulation

A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function represents a continuous transmission mask and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

A method including: obtaining a characteristic of a portion of a design layout; determining a characteristic of M3D of a patterning device including or forming the portion; and training, by a computer, a neural network using training data including a sample whose feature vector includes the characteristic of the portion and whose supervisory signal includes the characteristic of the M3D. Also disclosed is a method including: obtaining a characteristic of a portion of a design layout; obtaining a characteristic of a lithographic process that uses a patterning device including or forming the portion; determining a characteristic of a result of the lithographic process; training, by a computer, a neural network using training data including a sample whose feature vector includes the characteristic of the portion and the characteristic of the lithographic process, and whose supervisory signal includes the characteristic of the result.

Systems, methods, and computer-readable media for preserving trust data during operating system updates of a secure element of an electronic device are provide. An update package is received to update an existing secure element operating system to a new secure element operating system by exporting trust data from the existing secure element operating system, after the exporting, uninstalling the existing secure element operating system, migrating the exported trust data using a migration operating system when a data format version of the existing secure element operating system is different than a data format version of the new secure element operating system, installing the new secure element operating system, and importing the migrated trust data into the installed new secure element operating system.

Preserving trust data during operating system updates of a secure element of an electronic device

A method, including: obtaining a set of conditions for a resist development model for simulating a resist development process of a resist layer; and performing, by a hardware computer system, a computer simulation of the resist development process using the set of conditions and the resist development model to obtain a characteristic of the development of the resist layer, wherein the computer simulation separately simulates different certain different physical and chemical processes and characteristics of the resist development process.

Methods for evaluating resist development

A multi-cloud orchestration system includes a computer executed set of instructions that communicates with multiple computing clouds and/or computing clusters each having one or more resources for executing an application. The instructions are executed to receive information associated with an application, allocate a resource pool to be used for executing the application in which the resource pool including at least one resource from each of the computing clouds and/or computing clusters. The instructions may be further executed to provision the resources to execute the application.

Orchestration management system and method for managing a resource pool across multiple computing clouds

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Sunnyvale, CA, United States of America

Peng Liu