Texas Instruments Corporation

Mediatek Singapore Pte. Ltd.

Sichuan Highway Planning, Survey, Design and Research Institute Ltd

Institute of Mountain Hazards and Environment, Cas

Sichuan Institute of Space Systems Engineering

Peng Li

Hong Yang

Yunlong Liu

Ya Ping Chen

Chao Zhuang

Seetharaman Sridhar

Rui Liu

Wei Zhao

Yubin Yang

Qiang Yu

Yi Zuo

Shengpin Yang

Jing Hu

Sheng Zou

Yuehai Chen

Lisheng Deng

Dong Wang

Yu Lei

Huayong Chen

Yang Jia

Yu Luo

Hansheng Zheng

Dan Li

Yiqian Cheng

Chuanghua Zhao

Changfeng Liu

Wenxiang Zhong

Shuxin Duan

Yonggang Ge

Lu Sun

Huilong Pu

Yixin Wang

Junwen Peng

Yuchen Li

Zhiyun Liu

Shuqian Huang

Shengfu Li

A method for improving graphics performance is provided. The method includes: determining whether a current frame rendered into a frame buffer is a first frame in a first vertical synchronization (VSYNC) period defined by a first VSYNC signal; and pre-rendering a first next frame into the frame buffer in the first VSYNC period when the current frame is the first frame, wherein the first next frame is a frame that is next to the first frame.

Method and device for improving graphics performance

The present disclosure generally relates to determining a process condition in a semiconductor process using attribute-relative process conditions. An example is a method of forming an integrated circuit (IC). First and second historical process conditions are obtained. The first historical process conditions are of previous semiconductor processing corresponding to a target value of a process attribute for forming the IC, and the second historical process conditions are of previous semiconductor processing corresponding to variable values of the process attribute. Attribute-relative process conditions are calculated. Each attribute-relative process condition is based on the first historical process conditions and the second historical process conditions that correspond to a respective given value of the variable values. An average process condition is determined from a subset of the attribute-relative process conditions. A process condition of a subsequent semiconductor process is set based on the average process condition.

Process control system including process condition determination using attribute-relative process condition

An on-orbit recycling method for a buffer foam of a cargo spacecraft includes the following steps: mechanically cutting a shaped PU foam into foam micro-blocks, and putting the foam micro-blocks into a packaging bag for packaging, where the packaging bag is filled with a foaming adhesive; the foaming adhesive includes a component A and a component B, which are independently packaged in a two-component packaging bag; and the component A and the component B are separated by a film; and squeezing the film between the component A and the component B, such that the two components are fully mixed, foamed and expanded to finally burst the two-component packaging bag, where after the packaging bag is burst, the foaming adhesive expands into gaps of the foam micro-blocks; and in a microgravity state of space, the foaming adhesive expands and fills uniformly in all directions and fully infiltrates the foam micro-blocks.

On-orbit recycling method for buffer foam of cargo spacecraft

The present disclosure relates to the field of early warning for geological disasters, and discloses an early warning method for icefall-caused moraine lake outburst disasters, which aims at solving the problems of low early warning precision and difficulty in implementation in an early warning solution of the prior art. The method includes: S1, calculating topographic parameters of moraine lakes and upstream glaciers thereof, and filtering a moraine lake to undertake focal monitoring; S2, calculating a freezing-thawing cycle index and a regional accumulated temperature index of an upstream glacier region for the moraine lake to undertake focal monitoring, S3, calculating a catastrophic climate determination factor T, wherein if the catastrophic climate determination factor Tsatisfies a corresponding catastrophic climate determination condition, an early warning condition is satisfied, otherwise the early warning condition is not satisfied; and S4, implementing early warning.

Early warning method for icefall-caused moraine lake outburst disasters

A method () of fabricating a semiconductor device includes etching () a group of trenches in a semiconductor surface layer of a substrate. The group of trenches includes an outermost trench that has a first width and remaining trenches of the group of trenches have a second width that is less than the first width. The outermost trench is formed at an edge of the group of trenches. A dielectric liner is formed () in the group of trenches and the dielectric liner is etched () in an upper portion of the group of trenches to remove a partial thickness of the dielectric liner. A full thickness of the dielectric liner is maintained in a lower portion of the group of trenches. The group of trenches is filled () with a polysilicon layer.

Dual shield oxide damage control

A semiconductor device includes a substrate including a semiconductor surface layer. A field plate (FP) includes a trench in the semiconductor surface layer filled with a single polysilicon layer positioned on at least one side of a power metal-oxide-semiconductor field effect transistor (power MOSFET). The power MOSFET includes a dielectric liner lining a sidewall of the trench under the polysilicon layer including a second dielectric liner on a first dielectric liner. An upper portion of the dielectric liner has a lower dielectric thickness as compared to a dielectric thickness on its lower portion. The single polysilicon layer extends continuously over the dielectric liner along both the lower portion and the upper portion. The power MOSFET includes a drain including a drain contact below a vertical drift region in the semiconductor surface layer, and a gate, body and a source above the vertical drift region.

Semiconductor device having polysilicon field plate for power MOSFETs

Growing community of inventors

Chengdu, China

Peng Li