Nanyang Technological University

Other

National University of Singapore

Institute of Materials Research and Engineering

Peng Li

Soo Jin Chua

Bee Eng Mary Chan

Ji Zhang

Maosheng Hao

Matthew Wook Chang

Mouad Lamrani

Chuncai Zhou

Susanna Su Jan Leong

Xiaobao Qi

A hybrid nanomaterial consisting of graphene oxide (GO) nanomaterial covalently conjugated to cationic quaternized chitosan is provided. Method of preparing the hybrid nanomaterial, an antimicrobial composition containing the hybrid nanomaterial, and use of the antimicrobial composition in inhibiting growth of microorganisms in an environment are also provided.

Hybrid nanomaterial of graphene oxide nanomaterial and cationic quaternized chitosan

An object of the present invention is to provide a polymerizable composition capable of providing antimicrobial properties to ophthalmic and medical devices relatively inexpensively with ease, and an antimicrobial composition obtained by polymerizing the polymerizable composition. A polymerizable composition for ophthalmic or medical use comprising an epsilon-polylysine having (meth)acryloyl group is provided. The content of the epsilon-polylysine having (meth)acryloyl group in the polymerizable composition is preferably about 0.1 to 99% by weight, based on the whole amount of the composition. A coating agent for ophthalmic or medical use comprising the above polymerizable composition, an antimicrobial composition for ophthalmic or medical use obtained by polymerizing the above polymerizable composition, an ophthalmic or medical device comprising the antimicrobial composition, and a contact lens comprising the antimicrobial composition are also provided.

Polymerizable composition for ophthalmic and medical use and antimicrobial composition obtained by polymerizing the polymerizable composition

Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InGaN/InGaN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).

Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)

Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple In Ga N/In Ga N quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).

Growing community of inventors

Singapore, Singapore

Peng Li