Boe Technology Group Co., Ltd.

Chengdu Boe Optoelectronics Technology Co., Ltd.

Peking University

Beijing Baidu Netcom Science and Technology Co., Ltd.

Peng Huang

Yanxin Wang

Shuquan Yang

Zhifeng Zhan

Wei Wang

Tao Gao

Xiaoyan Liu

Jinfeng Kang

Jiafan Shi

Ke Liu

Bingqiang Gui

Runze Han

Song Wang

Lifeng Liu

Yachen Xiang

Ling Shi

Yang Yu

Yuanzheng Guo

Zhu Wang

Jingkai Ni

Yucheng Chan

Wenqiang Li

Hui Lu

Yanqiang Wang

Guoyi Cui

Hai Zheng

Zeliang Li

Xiaoqi Ding

Ke Yang

Yulin Feng

Xinlei Yang

Fushi Jin

Yizhou Zhang

Zhi Gong

Chang Hou

A spiking convolutional neural network based on a FLASH storage and computing array, including: a sampling module, a FLASH-based storage and computing array and a corresponding neuron module, and a counter module; the sampling module is used to sample an input image to obtain an input spike; the FLASH-based storage and computing array stores a weight matrix, and is used to perform a vector matrix multiplying operation on the input spike and the weight matrix, and an operation result is output in a form of current; the neuron module is used to integrate the operation result of the FLASH-based storage and computing array so as to generate an output spike; the counter module is used to count a number of spikes generated by the neuron module of an output layer, and determine the number of spikes of the neuron module with a largest number of spikes as a recognition result.

Spiking convolutional neural network based on flash storage and computing array

Provided are a display substrate, a preparation method thereof and a display apparatus. The display substrate includes a first semi-conductive layer, a first conductive layer, a second conductive layer, a second semi-conductive layer, a third conductive layer, an interlayer insulating layer and an organic layer stacked on a substrate. The first semi-conductive layer includes an active layer of a polysilicon transistor, the first conductive layer includes a gate electrode of a polysilicon transistor and a first electrode plate of a storage capacitor, the second conductive layer includes a second electrode plate of a storage capacitor, the second semi-conductive layer includes an active layer of an oxide transistor, and the third conductive layer includes a gate electrode of an oxide transistor.

Display substrate, preparation method thereof, and display apparatus

A display substrate is provided. The display substrate includes: a base substrate; a light-shielding layer disposed on the base substrate, the light-shielding layer comprising a light-shielding region; and a pixel drive layer disposed on a side of the light-shielding layer away from the base substrate, the pixel drive layer including at least one first thin-film transistor, at least one second thin-film transistor, and a first electrode plate of at least one storage capacitor, wherein the first thin-film transistor is disposed in correspondence with the light-shielding region, the second thin-film transistor in correspondence with the light-shielding region, and the at least one first electrode plate are disposed in correspondence with the light-shielding region.

Display substrate, method for manufacturing same, and display apparatus

An operating circuit and an operating method of a resistive random-access memory are provided, the operating circuit includes: at least one capacitance connected in series with the resistive random-access memory, so that the resistive random-access memory is grounded through the at least one capacitance. The operating method includes: connecting at least one capacitance in series with a resistive random-access memory, so that the resistive random-access memory is grounded through the capacitance; applying a forming pulse voltage or a set pulse voltage on the resistive random-access memory to achieve a forming operation or a set operation of the resistive random-access memory.

Operating circuit and operating method of resistive random access memory

The present disclosure provides a wiring structure, a display substrate and a display device, and belongs to the field of display technology. The wiring structure of the present disclosure comprises a body portion provided with hollow patterns; the body portion has a first side and a second side which are provided opposite to each other along an extending direction of the wiring structure, and both the first and second sides are wavy; the body portion comprises a plurality of conductive elements sequentially connected along the extending direction of the wiring structure; and in each conductive element, a length of a protruding portion on the first side in the extending direction of the wiring structure is different from that of a protruding portion on the second side in the extending direction of the wiring structure.

Wiring structure, display substrate and display device

A system and a method for compressing an image based on a FLASH in-memory computing array are provided. The system includes: a convolutional neural network for encoding of the FLASH in-memory computing array, a convolutional neural network for decoding based on the FLASH in-memory computing array, and a quantization module; the convolutional neural network for encoding based on the FLASH in-memory computing array is configured to encode an original image to obtain a feature image; the quantization module is configured to quantize the feature image to obtain a quantized image; the convolutional neural network for decoding based on the FLASH in-memory computing array is configured to decode the quantized image to obtain a compressed image.

System and method for compressing image based on flash in-memory computing array

A display substrate, a display panel, and a display device are provided. The display substrate includes: a base substrate; and a first transistor on the base substrate. The first transistor includes a first active layer, a first bottom gate electrode between the base substrate and the first active layer, and a first top gate electrode on a side of the first active layer away from the base substrate. A third gate insulating layer is provided between the first bottom gate electrode and the first active layer. The first active layer contains an oxide semiconductor material, and the third gate insulating layer contains a silicon oxide material. A surface of the first bottom gate electrode away from the base substrate is in direct contact with the silicon oxide material, and a surface of the first active layer close to the base substrate is in direct contact with the silicon oxide material.

Display substrate, display panel, and display device

A display substrate includes a plurality of sub-pixels, wherein at least one sub-pixel includes a driving circuit layer and a light emitting structure layer disposed on the driving circuit layer; the driving circuit layer includes a pixel driving circuit, and the light emitting structure layer includes a light emitting device connected with the pixel driving circuit; the pixel driving circuit includes a reset sub-circuit, a writing sub-circuit, a driving sub-circuit, a compensation sub-circuit, an energy storage sub-circuit and a light emitting control sub-circuit; and at least one of the reset sub-circuit, the compensation sub-circuit, and the writing sub-circuit includes an oxide transistor and a one-way conductive device.

Display substrate, preparation method thereof, and display device

A display substrate, a display panel, and a display device are provided. The display substrate includes: a base substrate; a first semiconductor layer on the base substrate; and a second semiconductor layer on a side of the first semiconductor layer away from the base substrate. The display substrate further includes a plurality of thin film transistors on the base substrate, which at least include a first transistor, a second transistor and a third transistor. Each of the plurality of thin film transistors includes an active layer. The active layer of at least one of the first transistor and the second transistor is located in the second semiconductor layer and contains an oxide semiconductor material. The active layer of the third transistor is located in the first semiconductor layer and contains a polysilicon semiconductor material. At least one of the first transistor and the second transistor has a dual-gate structure.

Provided is a display substrate, a method for preparing the same, and a display device. The display substrate includes a pad bending region. In the pad bending region, the display substrate includes a base, and an inorganic insulating layer and a metal layer laminated on the base. The metal layer includes a plurality of discrete metal wires. The inorganic insulating layer includes a plurality of discrete first inorganic insulating layers, each of which is arranged between each of the plurality of discrete metal wires and the base.

Display substrate and method for preparing the same, and display device

A flexible display substrate, a flexible display device, and a method of fabricating a flexible display substrate are provided. The flexible display substrate includes: a back plate including a display area which include a bending area and a non-bending area; and a back film layer disposed on the back plate and including a first sub-back film layer and a second sub-back film layer, wherein the first sub-back film layer is disposed on the non-bending area, and the second sub-back film layer is disposed on the bending area and covers a portion of the bending area.

Flexible display substrate, flexible display device and method for fabricating flexible display substrate

Wiring structure, display subtrate and display device

A drive backplane and a display panel are provided, the drive backplane includes: a substrate; and an oxide thin film transistor arranged on the substrate, wherein the oxide thin film transistor includes: an oxide active layer; a first gate structure disposed on a side of the oxide active layer away from the substrate; and a second gate structure disposed between the oxide active layer and the substrate; wherein at least one of the first gate structure and the second gate structure comprises a plurality of gate electrodes spaced apart along a direction in which the oxide active layer extends.

Drive backplane and display panel

A flexible substrate including a flexible base substrate, and a wiring layer and a back film on opposite sides of the flexible base substrate respectively. A side of the flexible base substrate facing away from the wiring layer is provided with a flat area including the back film and a bending area from which the back film is removed, the bending area is provided with an elastic reinforced film, and an elastic modulus of the elastic reinforced film is smaller than an elastic modulus of the back film. A display device including the flexible substrate and a method for manufacturing the flexible substrate are also provided.

Flexible substrate, method for manufacturing the same and display device

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Beijing, China

Peng Huang