Texas Instruments Corporation

Peng-Heng Chang

Chi-Cheong Shen

Kenneth E Bean

Satwinder D Malhi

Preferred embodiments include silicon-on-insulator structures (30) and integrated circuits include a thin single crystal silicon layer (32) on a silicon dioxide layer (34) which is on a polysilicon layer (36) bonded to a surface-oxidized silicon substrate (42) by a glass layer (38). Also, single crystal silicon layers on oxide on polysilicon substrates and methods of fabrication are included in the preferred embodiments.

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Dallas, TX, United States of America

Peng-Heng Chang