Nanyang Technological University

Huawei Technologies Co., Limited

Sumitomo Electric Industries, Limited

Agency for Science, Technology and Research

Telefonaktiebolaget Lm Ericsson (publ)

Institute of Materials Research and Engineering

Peng Chen

Bee Eng Mary Chan

Eiryo Takasuka

Soo-Jin Chua

Lain-Jong Li

Jianwen Zhao

Bo Yang

Masaki Ueno

Li Qin Shen

Soo Jin Chua

Jun Wang

Wei Gu

Yinliang Hu

Sudhiranjan Tripathy

Duoliang Fan

Xin Zheng

Fangchao Yuan

Zhonglin Miao

Jingmin Zhang

Zhen Chen

Shan Li

This application provides a downstream packet sending method, a downstream packet forwarding method, a downstream packet sending apparatus, and a downstream packet forwarding apparatus. The downstream packet sending method in this application includes: configuring a downstream forwarding path of a downstream packet for a terminal device; generating a source MAC address based on the downstream forwarding path, where the source MAC address is used to indicate the downstream forwarding path; and sending the downstream packet to a forwarding switch, where the downstream packet includes the source MAC address. This application can reduce costs, improve efficiency, and simplify network traffic.

Downstream packet sending and forwarding method and apparatus

The present disclosure relates to signal sending methods and apparatus. One example method includes generating a first data signal based on channel state information, receiving a second data signal sent by a primary transmitter, determining a phase of the second data signal, and sending the first data signal based on a phase of a first measurement signal sent by the primary transmitter and the phase of the second data signal sent by the primary transmitter.

Signal sending method and apparatus

The invention relates to biomolecules conjugated to graphene quantum dots, and in particular, to use of such biomolecule-graphene quantum dot conjugates as fluorophores for imaging applications.

Biomolecule-graphene quantum dot conjugates and use thereof

Various embodiments relate to a method of modifying the electrical properties of carbon nanotubes. The method may include providing a substrate having carbon nanotubes deposited on a surface of the substrate, and depositing on the carbon nanotubes a coating layer comprising a mixture of nanoparticles, a matrix in which the nanoparticles are dissolved or stabilized, and an ionic liquid. A field-effect transistor including the modified carbon nanotubes is also provided.

Method of modifying electrical properties of carbon nanotubes using nanoparticles

It is presented a method for changing a semi-persistent scheduling, SPS, interval for a wireless device from an original SPS interval to a new SPS interval. The method is performed in a network node and comprises the steps of: determining that the SPS interval is to be changed; generating a message element comprising an indicator of the new SPS interval; and transmitting a signal comprising the message element to the wireless device over a user plane. A corresponding network node, computer program and computer program product are also presented.

Changing semi-persistent scheduling interval

The invention relates to a method of modifying electrical properties of carbon nanotubes by subjecting a composition of carbon nanotubes to one or more radical initiator(s). The invention also relates to an electronic component such as field-effect transistor comprising a carbon nanotube obtained using the method of the invention. The invention also relates to the use of the modified carbon nanotubes in conductive and high-strength nanotube/polymer composites, transparent electrodes, sensors and nanoelectromechanical devices, additives for batteries, radiation sources, semiconductor devices (e.g. transistors) or interconnects.

Method for modifying electrical properties of carbon nanotubes

A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an InGaN quantum well layer, an InGaN barrier layer (x&#x3e;0.3 or x=0.3), and InGaN quantum dots, where x&#x3c;y&#x3c;z&#x2266;1.

Group III nitride white light emitting diode

A method and structure for fabricating III-V nitride layers on silicon substrates includes a substrate, a transition structure having AlGaN, AlN and GaN layers, and a superlattice structure having AlGaN and GaN layers. In the invention, the large lattice mismatch (17%) between GaN and silicon is solved by using AlN as the first buffer layer with a 5:4 coincidence between AlN(0001) and Si(111) lattice to reduce the lattice mismatch to 1.3%.

Method and structure for fabricating III-V nitride layers on silicon substrates

The GaN single-crystal substratein accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020&#xb0; C. in a mixed gas atmosphere containing at least an NHgas. As a consequence, an atomic rearrangement is effected in the surface of the substratein which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrateTherefore, the surface of an epitaxial layerformed on the substratecan be made flat.

GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same

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Singapore, Singapore

Peng Chen