Taiwan Semiconductor Manufacturing Comp. Ltd.

Pen Chieh Yu

Chan-Hong Chern

Cheng-Hsiang Hsieh

Yi-An Lai

A semiconductor device includes a transistor comprising: a plurality of layers, wherein each of the plurality of layers has at least one Group III-V compound material; a gate electrode operatively coupled to at least one of the plurality of layers; a source electrode disposed on a first side of the gate electrode; a drain electrode disposed on a second side of the gate electrode; a field plate disposed between the gate electrode and the drain electrode; and a plurality of conductive lines disposed above the gate electrode, the source electrode, and the drain electrode. The semiconductor device further includes a plurality of test structures, wherein each of the test structures, including a first metal pattern and a second metal pattern, emulates at least one of the gate electrode, the source electrode, the drain electrode, the field plate, or at least one of the plurality of conductive lines.

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Hsinchu, Taiwan

Pen Chieh Yu