Asm IP Holding B.v.

Peipei Gao

Xing Lin

Alexandros Demos

Wentao Wang

Siyao Luan

Chuang Wei

Mingyang Ma

Ion Hong Chao

Prajwal Nagaraj

Paul F Ma

Fei Wang

Bubesh Babu Jotheeswaran

Fan Gao

Hichem M'Saad

Han Ye

Kishor Patil

A coating and a method to form the coating is proposed for a semiconductor film pre-clean and etch apparatus. The coating may be employed in environments where it is difficult to use a traditional coating or coating method. The coatings provide advantages including: an ability to effectively deliver hydrogen radicals and fluorine radicals to a wafer surface in one apparatus or individually in two apparatuses; a coverage of high aspect ratio features on critical components; an operability in high temperatures exceeding 150° C.; and a protection of a part with high aspect ratio features underneath the coating, thereby preventing metal and particles on a processed wafer.

High temperature coatings for a preclean and etch apparatus and related methods

A fixture includes a frame, a leveling plate, a bracket, and a laser profiler. The frame is arranged for fixation above a reaction chamber arranged to deposit a film onto a substrate. The leveling plate is supported on the frame. The bracket is supported on the leveling plate. The laser profiler is suspended from the bracket, overlays the reaction chamber, and has a field of view that extends through the leveling plate and the frame to determine position of a target within the reaction chamber. Semiconductor processing systems and methods of determining position of targets within reaction chambers in semiconductor processing systems are also described.

Fixture and method for determining position of a target in a reaction chamber

A system and method suitable for removing both carbon-based contaminants and oxygen-based contaminants from a substrate within a single process chamber are disclosed.

Apparatus for use with hydrogen radicals and method of using same

Combined susceptor, support, and lift system

A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

Reactor system including a gas distribution assembly for use with activated species and method of using same

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Tempe, AZ, United States of America

Peipei Gao