International Business Machines Corporation

Globalfoundries Inc.

Cadence Design Systems, Inc.

Peilin Song

Franco Stellari

Dirk Pfeiffer

Alan Weger

Franco Motika

Raphael Peter Robertazzi

Keith Aelwyn Jenkins

Andrea Bahgat Shehata

Alberto Tosi

Thomas M Shaw

Jean-Olivier Plouchart

Stanislav Polonsky

Richard Frank Rizzolo

Anuja Sehgal

Dzmitry S Maliuk

Takashi Ando

James H Stathis

Ulrich Baur

Jifeng Chen

Frank David Ferraiolo

Barry P Linder

Michael Sperling

Emmanuel Yashchin

Emily A Ray

Tian Xia

Kevin Geoffrey Stawiasz

Cyril Cabral, Jr

Arvind Kumar

William Vincent Huott

Mary Prilotski Kusko

Chandler Todd McDowell

Timothy J Koprowski

Chung-Ching Lin

David F Heidel

Darrell L Miles

John D Sylvestri

Stephen Bradley Ippolito

Vijay Narayanan

Kerry Bernstein

Martin Michael Frank

Eduard Albert Cartier

Naigang Wang

Robert L Wisnieff

Thomas Anthony Wassick

James A Culp

Anthony D Polson

Ernest Y Wu

Steven Erik Steen

John Bruley

Phillip J Nigh

Jean-Oliver Plouchart

Steven G Shevach

Todd Michael Burdine

Franco Zappa

Kevin William McCauley

Howard B Druckerman

Mesut Meterelliyoz

Jien-Chung Lo

Philip J Nigh

Franco Stallari

System and method to localize a position of an RRAM filament of resistive memory device at very low bias voltages using a scanning laser beam. The approach is non-invasive and allows measurement of a large number of devices for creating statistics relating to the filament formation. A laser microscope system is configured to perform a biasing the RRAM cell with voltage (or current). Concurrent to the applied bias, a laser beam is generated and aimed at different positions of the RRAM cell (e.g., by a raster scanning). Changes in the current (or voltage) flowing through the cell are measured. The method creates a map of the current (or voltage) changes at the different laser positions and detects a spot in the map corresponding to higher (or lower) current (or voltage). The method determines the (x,y) position of the spot compared to the edge/center of the RRAM cell.

RRAM filament spatial localization using a laser stimulation

Techniques regarding autonomous identification of aged circuits are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a memory that can store computer executable components. The system can also comprise a processor, operably coupled to the memory, and that can execute the computer executable components stored in the memory. The computer executable components can comprise an identification component, operatively coupled to the processor, that can identify an aged circuit by analyzing a current-voltage characteristic curve for a distortion in a sub-threshold quiescent current signature of the aged circuit.

Detection of an aged circuit

An obfuscation circuit relies on a tamper-resistant nonvolatile memory which encodes a trusted Boolean function. The Boolean function is used to enable several operations relating to circuit obfuscation, including obfuscation of logic circuitry, obfuscation of operand data, and release of IP blocks. The tamper-resistant nonvolatile memory is part of a trusted integrated circuit structure, i.e., one fabricated by a trusted foundry, separate from another integrated circuit structure which contains the various operational logic circuits of the design and is fabricated by an untrusted foundry. The Boolean function is encoded based on a look-up table implemented as a cascaded multiplexer circuit. Multiple obfuscation functions can be so encoded. The obfuscation functions may be reprogrammed using a protocol that relies on symmetric keys, one of which is stored in the tamper-resistant nonvolatile memory.

Tamper resistant obfuscation circuit

Circuit board inspection by receiving a near infrared (NIR) image of at least a portion of a circuit board, analyzing the NIR image using a machine learning model, and detecting anomalous circuit board portions according to the analysis.

Machine learning-based circuit board inspection

A tamper-resistant memory is formed by placing a solid-state memory array between metal wiring layers in the upper portion of an integrated circuit (back-end of the line). The metal layers form a mesh that surrounds the memory array to protect it from picosecond imaging circuit analysis, side channel attacks, and delayering with electrical measurement. Interconnections between a memory cell and its measurement circuit are designed to protect each layer below, i.e., an interconnecting metal portion in a particular metal layer is no smaller than the interconnecting metal portion in the next lower layer. The measurement circuits are shrouded by the metal mesh. The substrate, metal layers and memory array are part of a single monolithic structure. In an embodiment adapted for a chip identification protocol, the memory array contains a physical unclonable function identifier that uniquely identifies the tamper-resistant integrated circuit, a symmetric encryption key and a release key.

Tamper-resistant circuit, back-end of the line memory and physical unclonable function for supply chain protection

A method and apparatus related to developing electromagnetic emission and power models for a target device using photonic emissions thereof are provided. Data of photonic emissions of a target device during a first period of time with the target device in one or more modes is recorded. Data of electromagnetic emissions of the target device during the first period of time with the target device in the one or more modes is also recorded. The recorded data of the photonic emissions and the recorded data of the electromagnetic emissions are correlated to establish one or more electromagnetic emission models for the target device. The one or more electromagnetic emission models enable predictive analysis of emissions by the target device.

Using photonic emission to develop electromagnetic emission models

Methods and systems for locating a filament in a resistive memory device are described. In an example, a device can acquire an image indicating an occurrence of photoemission from the resistive memory device. The device can determine a location of the filament in a switching medium of the resistive memory device using the acquired image.

RRAM filament location based on NIR emission

A Scanning Time-Resolved Emission (S-TRE) microscope or system includes an optical system configured to collect light from emissions of light generated by a device under test (DUT). A scanning system is configured to permit the emissions of light to be collected from positions across the DUT in accordance with a scan pattern. A timing photodetector is configured to detect a single photon or photons of the emissions of light from the particular positions across the DUT such that the emissions of light are correlated to the positions to create a time-dependent map of the emissions of light across the DUT. Updating the time-dependent map of the emissions based on variable dwell times at respective locations of the DUT.

Scanning methods for creating time-resolved emission images of integrated circuits using a single-point single-photon detector and a scanning system

A Scanning Time-Resolved Emission (S-TRE) microscope or system includes an optical system configured to collect light from emissions of light generated by a device under test (DUT). A scanning system is configured to permit the emissions of light to be collected from positions across the DUT in accordance with a scan pattern. A timing photodetector is configured to detect a single photon or photons of the emissions of light from the particular positions across the DUT such that the emissions of light are correlated to the positions to create a time-dependent map of the emissions of light across the DUT. The scanning system is configured to update the time-dependent map of the emissions based on combinations of the emissions of light at certain locations.

Creating time-resolved emission images of integrated circuits using a single-point single-photon detector and a scanning system

A Scanning Time-Resolved Emission (S-TRE) microscope or system includes an optical system configured to collect light from emissions of light generated by a device under test (DUT). A scanning system is configured to permit the emissions of light to be collected from positions across the DUT in accordance with a scan pattern. A timing photodetector is configured to detect a single photon or photons of the emissions of light from the particular positions across the DUT such that the emissions of light are correlated to the positions to create a time-dependent map of the emissions of light across the DUT. The scanning system is configured to updated the time-dependent map of the emissions based on a transformation of an underlying time-resolved waveform at certain intervals and corresponding to at least one location and generating a pseudo image of the DUT.

Imaging integrated circuits using a single-point single-photon detector and a scanning system and calculating of a per-pixel value

A method for characterizing an integrated circuit that includes ramping the supply voltage to an integrated circuit as a function of time for each of the transistors in the integrated circuit, and measuring a power supply current for the integrated circuit during the ramping of the power supply voltage. The measured peaks in the power supply current are a current pulse that identifies an operation state in which each of the transistors are in an on state. The peaks in the power supply current are compared to the reference peaks for the power supply current for a reference circuit having a same functionality as the integrated circuit to determine the integrated circuit's fitness.

Method for the characterization and monitoring of integrated circuits

Methods and systems of detecting chip degradation are described. A processor may execute a test on a device at a first time, where the test includes executable instructions for the device to execute a task under specific conditions relating to a performance attribute. The processor may receive performance data indicating a set of outcomes from the task executed by the device during the test. The processor may determine a first value of a parameter of the performance attribute based on the identified subset. The processor may compare the first value with a second value of the parameter of the performance attribute. The second value is based on an execution of the test on the device at a second time. The processor may determine a degradation status of the device based on the comparison of the first value with the second value.

Detection of performance degradation in integrated circuits

Techniques facilitating integrated circuit identification and reverse engineering are provided. A computer-implemented method can comprise identifying, by a system operatively coupled to a processor, an element within a first elementary cell of one or more elementary cells of an integrated circuit. The method can also comprise matching, by the system, the element with respective elements across the one or more elementary cells including the first elementary cell. The respective elements can be replicas of the element. Further, matching the element with respective elements can be based on a layout analysis of the integrated circuit.

Integrated circuit identification

A method for characterizing an integrated circuit that selecting at least two devices from an integrated circuit for measuring light emission, wherein each of the at least two devices have experienced a different level of stress, applying power to the integrated circuit, and measuring the light emission from the at least two devices. The method also includes comparing the light emission that is measured from the at least two devices, wherein a difference between the light emission that is measured from the at least two devices greater than a predetermined ratio indicates that at least one of the devices from the at least two devices has a below specification performance.

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Lagrangeville, NY, United States of America

Peilin Song