Skyworks Solutions, Inc.

Newport Fab, LLC

Peihua Ye

Thomas Obkircher

Adrian John Bergsma

Peter Harris Robert Popplewell

William John Domino

Gregory Edward Babcock

Patrick Marcus Naraine

Guillaume Alexandre Blin

Tirdad Sowlati

Marco Racanelli

Bang Li Liang

Engin Ibrahim Pehlivanoglu

Eric Marsan

Jie Zheng

Raja Pullela

In some embodiments, a semiconductor chip device can include a semiconductor substrate having a switching circuit with a first node, and a plurality of layers configured to support the semiconductor substrate and to provide electrical connections for the switching circuit between a second node connectable to a location external to the semiconductor chip and the first node. The plurality of layers can include a redistribution layer, and a signal path can be implemented as a part of the redistribution layer. The signal path can have a first end electrically connected to the first node and a second end electrically connected to the second node, and be configured to provide a selected inductance.

Radio-frequency switch having redistribution layer inductance

Aspects and examples described herein provide a variable gain amplifier circuit and assembly. In one example, a variable gain amplifier circuit includes a signal input, a signal output, and a variable gain amplifier including a plurality of unit cell groups coupled between the signal input and the signal output, the variable gain amplifier configured to provide an adjustable gain to a signal received at the signal input during each of a plurality of amplify modes of the variable gain amplifier, each of the plurality of amplify modes corresponding to at least one unit cell group of the plurality of unit cell groups. A bypass path including a fixed attenuator is coupled in parallel with the variable gain amplifier between the signal input and the signal output to selectively couple the signal input to the signal output through the fixed attenuator during a bypass mode.

High-linearity variable gain amplifier with bypass path

Systems and methods are provided for reducing the effects of an impedance mismatch between a communications system and a shared communications medium. A communication system, such as a transceiver within a cable modem, switches between various operating modes including a transmit mode, a receive mode, and a standby mode. The standby mode may be used while the transceiver is in an idle state between modes, such as while changing an amplifier gain states in between transmissions. While transitioning between modes, the impedance presented by the communications system can temporarily fluctuate causing unwanted signal reflections to propagate out of the communications system and on to the shared medium. Circuitry within the communications system, such as transmission circuitry including an adjustable attenuator, may be placed into a hybrid attenuation-isolation mode during the transition causing the magnitude of any unwanted signal reflections to be attenuated and reducing the impact on the shared medium.

Reducing impedance discontinuities on a shared medium

Systems and methods for suppressing transient outputs from an amplifier system are provided. An amplifier having a plurality of bias levels may be controlled to initiate a change in the level of a bias signal provided to the amplifier. The level of the bias signal is ramped from an initial bias level to a final bias level over numerous steps. The steps include at least one step in which the level of the bias signal is between the initial bias level and the final bias level. An amplifier system having multiple stages may be controlled to enable each stage and selectively couple each stage in a sequence that couples an output stage to an output terminal at the completion of the sequence.

Transient output suppression in an amplifier

Amplifier systems and methods are provided that include a fixed gain amplification stage coupled to an adjustable attenuation stage further coupled to a variable gain amplification stage. A controller controls an amount of attenuation provided by the adjustable attenuation stage and an amount of gain provided by the variable gain amplification stage to maintain any of various noise, efficiency, and/or linearity requirements of the amplifier system.

Wide dynamic range amplifier system

Apparatus and methods for low noise amplifiers (LNAs) are provided herein. In certain configurations, an LNA includes a gain stage and a bypass stage electrically connected in parallel with one another between an input and an output. The bypass stage and the gain stage are selectively activated based on a mode of the LNA. For example, the gain stage provides inverting amplification to an input signal received at the input in a gain mode. Additionally, the bypass stage provides a low gain path from the input to the output in a bypass mode. Additionally, the bypass stage includes a balun that provides inversion to the bypass stage such that a phase delay through the bypass stage is similar to a phase delay of the gain stage.

Apparatus and methods for low noise amplifiers

A downconverter is provided. The downconverter includes a I mixer and a Q mixer. Each mixer includes a transconductance stage and a mixer core stage. The outputs of the transconductance stages of the mixers are shorted together, and a resistors are arranged in series with an input of the mixer core stages.

Downconverting mixer

According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor might be a lateral PNP bipolar transistor and the base may comprise, for example, N type single crystal silicon. The bipolar transistor further comprises an emitter having a top surface, where the emitter is situated on the top surface of the base. The emitter may comprise P+ type single crystal silicon-germanium, for example. The bipolar transistor further comprises an electron barrier layer situated directly on the top surface of the emitter. The electron barrier layer will cause an increase in the gain, or beta, of the bipolar transistor. The electron barrier layer may be a dielectric such as, for example, silicon oxide. In another embodiment, a floating N+ region, instead of the electron barrier layer, is utilized to increase the gain of the bipolar transistor.

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Irvine, CA, United States of America

Peihua Ye