Nxp USA, Inc.

Freescale Semiconductor,inc.

Peidong Wang

Zhihong Cheng

Miaolin Tan

Zhe Ge

Liang Zhang

Zhijun Chen

Huabin Du

Yali Wang

Li Ying

Juan Fu

A method for configuring level shifter spare cells includes providing a power rail connectable to a corresponding power domain, and providing a spare cell including a level shifter circuit. The level shifter circuit has first and second terminals that are connectable to the power rail, and the first and second terminals are floating with respect to the power rail.

Level shifter spare cell

An isolation cell clamps a signal passing from a first, powered-down power domain to a second, power-on power domain. To reduce leakage current, some of the circuits and devices are connected to a voltage supply of the first or 'from' power domain, while other circuits and devices are connected to a voltage supply of the second or 'to' power domain.

Low leakage isolation cell

A multi-bit clock gating cell is used in an integrated circuit (IC) in place of single bit clock gating cells to reduce power consumption. A physical design method is used to form a clock tree of the IC. Initial positions of clock gating cells are defined with respective initial clock input paths. Selected clock gating cells are moved to modified positions in which they may be adjoining. Adjoining cells are merged by substituting a multi-bit clock gating cell having multiple gating signal inputs, corresponding gated clock outputs, and a common clock input path. A net reduction is obtained for the overall capacitance of the clock path due to reduction of the upstream capacitance of the clock path and of the resulting multi-bit clock gating cell itself, compared with the aggregate capacitance of the clock paths of the corresponding clock gating cells before moving and merging.

Integrated circuit with multi-bit clock gating cells

A multi-bit flip-flop has first and second one-bit flip-flops. The multi-bit flip-flop employs inter-cell clock switch (CSW) sharing in which the first and second one-bit flip-flops share at least one clock switch. The multi-bit flip-flop may also employ intra-cell CSW sharing in which at least one of the first and second one-bit flip-flops shares at least one clock switch. The inter-cell CSW sharing enables implementation of multi-bit flip-flops with fewer clock switches and possibly fewer data devices, while reducing power consumption, including state retention power gating power reduction.

Multi-bit flip-flop with shared clock switch

A latch circuit has a tri-state gate and a reverse tri-state gate that share the same complementary controls. The reverse tri-state gate locks an output of the tri-state gate when the tri-state gate is shut-off. The complementary control signals include a first undoped polysilicon strip. The output of the reverse tri-state gate may be coupled to the output of the tri-state gate via a second undoped polysilicon strip.

Flip-flop circuit with resistive poly routing

A state retention power gated cell includes a logic cell arranged in two or more rows. The logic cell has an active layer including at least a first well and a second well disposed in first and second rows, respectively. In a normal operation mode, the first well is powered with a first bias voltage, the second well is powered with a second bias voltage, the first power supply line is powered with VDDC, and the second power supply line is powered with VDD. In a standby mode, the first well preferably is powered down, the second well is powered with the second bias voltage, the first power supply line is powered with VDDC, and the second power supply line is powered down.

State retention power gated cell

A system for optimizing the number of dies that can be fabricated on a wafer uses a die number optimization (DNO) routine to determine a maximum number of dies for a target die area (TDA), and generate an initial result list of die shapes that have the maximum number of dies for the TDA. Optionally, a die size optimization (DSO) routine can be executed to determine a list of die shapes having a maximum die area corresponding to the maximum number of dies, a first list of optimized die shapes having a maximum area utilization (AU) for a decreased TDA, and/or a second list of optimized die shapes having a minimum AU for an increased TDA. A candidate list (CL) of the various die shapes can be generated, and entries from the CL automatically selected and/or displayed to indicate proposed wafer layouts.

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Suzhou, China

Peidong Wang