Purdue Research Foundation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Northwestern University

University of Southern California

Peide Ye

Zhiyuan Cheng

James Fiorenza

Bunmi T Adekore

Yi Xuan

Yanqing Wu

Tobin Jay Marks

Antonio Facchetti

Chongwu Zhou

David B Janes

Xianfan Xu

Gang Lu

Dapeng Wei

Sanghyun Ju

Han Chung Lin

Methods of forming structures that include InP-based materials, such as a transistor operating as an inversion-type, enhancement-mode device are disclosed. A dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer may be formed above a buffer layer having a lattice constant similar to a lattice constant of InP, the buffer layer being formed over a substrate having a lattice constant different from a lattice constant of InP.

INP-based transistor fabrication

A method of forming single and few layer graphene on a quartz substrate in one embodiment includes providing a quartz substrate, melting a portion of the quartz substrate, diffusing a form of carbon into the melted portion to form a carbon and quartz mixture, and precipitating at least one graphene layer out of the carbon and quartz mixture.

Method of laser direct synthesis of graphene

Methods of forming structures that include InP-based materials, such as a transistor operating as an inversion-type, enhancement-mode device. A dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer may be formed above a buffer layer having a lattice constant similar to a lattice constant of InP, the buffer layer being formed over a substrate having a lattice constant different from a lattice constant of InP.

InP-based transistor fabrication

Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.

Transparent nanowire transistors and methods for fabricating same

Field effect transistor devices comprising III-V semiconductors and organic gate dielectric materials, such dielectric materials as can afford flexibility in device design and fabrication.

High-performance field effect transistors with self-assembled nanodielectrics

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West Lafayette, IN, United States of America

Peide Ye