Taiwan Semiconductor Manufacturing Comp. Ltd.

Pei Yun Chung

Ming-Hsi Yeh

Kuo-Bin Huang

Ying-Liang Chuang

Chun-Chih Cheng

A method of forming a semiconductor device includes the following steps. A metal layer with at least one silicon-containing pattern therein is provided. A first wet etching process is performed by using a first etching solution, to clean a surface of the metal layer, wherein the first etching solution contains a base and a first oxidant. At least one cycle is performed. Each cycle includes a second wet etching process and a cleaning process. The second wet etching process is performed by using a second etching solution, to remove the metal layer, wherein the second etching solution contains an acid and a second oxidant. A cleaning process is performed.

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Hsinchu, Taiwan

Pei Yun Chung