Mikro Mesa Technology Co., Ltd.

Industrial Technology Research Institute

Tsinghua University

Pei-Yu Chang

Li-Yi Chen

Hsin-Wei Lee

Shih-Chyn Lin

Chun-Yi Chang

Chih-Hui Chan

Chao-Ta Huang

Da-Jeng Yao

Shih-Ting Lin

Cheng-Hsien Liu

Shih-Kang Fan

Chien-Nan Yeh

Wen-Syang Hsu

Hong-Yuan Huang

Chang-Hung Tien

Ting-Ju Yueh

Chi-Fan Chen

Kuo-Wei Chang

Chin-Jung Li

A spindle shaft device including a shaft, a first torque sensor, and a second torque sensor. The shaft extends along an axial direction and comprises a first side portion, a second side portion, and a central portion located between the first side portion and the second side portion. The central portion has a central torsional rigidity with respect to the axial direction. The first side portion has a first torsional rigidity with respect to the axial direction. The second side portion has a second torsional rigidity with respect to the axial direction. The first torsional rigidity is smaller than the central torsional rigidity. The second torsional rigidity is smaller than the central torsional rigidity. The first torque sensor is disposed on the first side portion. The second torque sensor is disposed on the second side portion.

Spindle shaft device with torque sensor

A method for manufacturing at least one light emitting diode (LED) includes epitaxying at least one light emitting diode (LED) structure on a growth substrate; forming at least one supporting layer on the LED structure; temporarily adhering the supporting layer to a carrier substrate through an adhesive layer, in which the supporting layer has a Young's modulus greater than that of the adhesive layer; and removing the growth substrate from the LED structure.

Method of manufacturing light emitting diodes having a supporting layer attached to temporary adhesive

A micro-light emitting diode (micro-LED) device includes a receiving substrate and a micro-LED. The micro-LED includes a first type semiconductor layer, a second type semiconductor layer, a current controlling layer, at least one reflective layer, and at least one first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling layer is joined with one of the first type semiconductor layer and the second type semiconductor layer, the current controlling layer having at least one opening therein. The reflective layer electrically is coupled with the first type semiconductor layer. The first electrode is disposed on a surface of the reflective layer facing the receiving substrate. The first electrode forms an adhesive bonding system with the receiving substrate.

Micro-light emitting diode (micro-LED) device

A transfer head array includes a base substrate, an interlayer isolation layer, plural transfer heads, and at least one shielding layer. The interlayer isolation layer is disposed on the base substrate, and the interlayer isolation layer has a flat top surface facing away from the base substrate. The transfer heads are arranged on the interlayer isolation layer. The shielding layer is disposed in the interlayer isolation layer.

Transfer head array

A method for manufacturing a light-emitting diode (LED) includes plural steps as follows. A first type semiconductor layer is formed. A second type semiconductor layer is formed on the first type semiconductor layer. An impurity is implanted into a first portion of the second type semiconductor layer. The concentration of the impurity present in the first portion of the second type semiconductor layer is greater than the concentration of the impurity present in a second portion of the second type semiconductor layer after the implanting, such that the resistivity of the first portion of the second type semiconductor layer is greater than the resistivity of the second portion of the second type semiconductor layer.

Light-emitting diode and method for manufacturing the same

A transfer head array includes a body and a plurality of transfer heads. The body has a first surface, a second surface opposite to the first surface, and a plurality of recesses. The first surface has at least one chucking region and at least one interference avoidance region, and the recesses are separated from each other and are disposed in the interference avoidance region. The transfer heads are disposed on the chucking region.

Transfer head array and transferring method

A method for preparing a plurality of micro-devices for transfer includes temporarily bonding the micro-devices onto a carrier substrate; testing the micro-devices on the carrier substrate to determine if there is at least one first failed micro-device in the micro-devices; and removing the first failed micro-device from the carrier substrate.

Intermediate structure for transfer, method for preparing micro-device for transfer, and method for processing array of semiconductor device

A machine for transferring at least one micro-device includes a carrier and a transfer device. The carrier includes a pedestal, a substrate, and at least one first cushion layer. The substrate allows the micro-device to be temporarily disposed thereon. The first cushion layer is disposed between the pedestal and the substrate. The transfer device includes a transfer head holder, transfer head, and at least one second cushion layer. The transfer head holder moves at least along a z-axis substantially perpendicular to the substrate. The transfer head has a grip force on the micro-device. The second cushion layer is disposed between the transfer head holder and the transfer head.

Machine for transferring micro-device

The present disclosure illustrates a platform system for in vitro cell co-cultivation with automatic trapping function. The platform system aims to develop a bio-chip applied in cell culture systems, and has several features. The first feature is that this co-cultivation platform can construct a micro environment suitable for culture of various cells. The second feature is dynamic perfusion. The microfluidic system is used to dynamically replace the culture medium, in order to maintain an appropriate environment for the growth of cells. The third feature is the automatic trapping. The cells to be cultured can be trapped in a suitable location according to the flow resistance, so that the damaged on the cell caused by manual operation can be minimized.

Platform system for in vitro cell co-cultivation with automatic trapping function

A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a current controlling structure, a first electrode, and a second electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling structure is joined with the first type semiconductor layer, and the current controlling structure has at least one current-injecting zone therein. The first electrode is electrically coupled with the first type semiconductor layer through the current-injecting zone of the current controlling structure. The second electrode is electrically coupled with the second type semiconductor layer.

Light-emitting diode

A LED display includes a bottom substrate, a first bottom electrode, a micro light emitting device, a wavelength conversion layer, an opposite electrode, and a first isolation layer. The first bottom electrode is disposed on the bottom substrate. The micro light emitting device is disposed on the first bottom electrode and includes at least one current controlling structure having at least one opening therein. The wavelength conversion layer covers the micro light emitting device, in which the wavelength conversion layer converts the light from a range of initial wavelengths into a range of predetermined wavelengths, and the range of predetermined wavelengths is greater than the range of initial wavelengths. The opposite electrode is electrically connected to the micro light emitting device. The first isolation layer is disposed between the micro light emitting diode and the opposite electrode to isolate the first bottom electrode and the opposite electrode.

Light-emitting diode display

A light-emitting device display includes a substrate, a first bottom electrode, a second bottom electrode, a micro light emitting device, a first isolation layer, an opposite electrode, and an encapsulation layer. The first and second bottom electrodes are disposed on the substrate. The micro light emitting device is disposed on the first bottom electrode and electrically connected to the first bottom electrode. The first isolation layer at least partially covers a side surface of the micro light emitting device, in which the first isolation layer has a refractive index n, and the micro light emitting device has a refractive index n, and n&#x2267;n. The opposite electrode is disposed on the micro light emitting device and electrically connected to the micro light emitting device and the second bottom electrode. The encapsulation layer at least covers the micro light emitting device and the first isolation layer.

Light-emitting diode display and manufacturing method thereof

A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor layer, a dielectric layer, and electrodes. The second type semiconductor layer is disposed on or above the first type semiconductor layer. The dielectric layer is disposed on the second type semiconductor layer. The dielectric layer includes openings therein to expose parts of the second type semiconductor layer. The electrodes partially are disposed on the dielectric layer and respectively electrically coupled with the exposed parts of the second type semiconductor layer through the openings of the dielectric layer, in which the electrodes are separated from each other.

Micro-light-emitting diode

A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a first current controlling structure, and a first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The second type semiconductor layer has a first region and a second region, in which the first region has a first threading dislocation density, the second region has a second threading dislocation density, and the first threading dislocation density is greater than the second threading dislocation density. The first current controlling structure is joined with the first type semiconductor layer and has at least one first current-injecting zone therein, in which the vertical projection of the second region on the first current controlling structure at least partially overlaps with the first current-injecting zone. The first electrode is electrically coupled with the first type semiconductor layer.

A light-emitting diode (LED) lighting device includes a substrate, a first bottom electrode, a second bottom electrode, a first bottom transparent isolation layer, a second bottom transparent isolation layer, a first vertical LED, a second vertical LED, and a top transparent electrode. The substrate has a first recess and a second recess therein. The first bottom electrode and the second bottom electrode are respectively disposed in the first recess and the second recess and are reflective. The first vertical LED is disposed in the first recess and on the first bottom electrode. The second vertical LED is disposed in the second recess and on the second bottom electrode. The first bottom transparent isolation layer and the second bottom transparent isolation layer are respectively disposed in the first recess and the second recess. The top transparent electrode electrically connects the first vertical LED and the second bottom electrode.

Growing community of inventors

Tainan, Taiwan

Pei-Yu Chang