Industrial Technology Research Institute

Pei-Shen Wei

Chang-Sheng Chen

Ching-Liang Weng

Chun-Kun Wu

Uei-Ming Jow

Ying-Jiunn Lai

Wei-Ming Jow

An embedded microelectronic capacitor incorporating at least one ground shielding layer is provided which includes an upper ground shielding layer that has an aperture therethrough; an electrode plate positioned spaced-apart from the upper ground shielding layer that has a via extending upwardly away from the electrode plate through the aperture in the upper ground shielding layer providing electrical communication to the electrode plate without shorting to the upper ground shielding layer; a middle ground shielding layer positioned in the same plane of the electrode plate, surrounding while spaced-apart from the electrode plate at a predetermined distance; a lower ground shielding layer positioned spaced-apart from the electrode plate in an opposing relationship to the upper ground shielding layer; and a dielectric material embedding the upper ground shielding layer; the middle ground shielding layer and the lower ground shielding layer.

Embedded microelectronic capacitor incorporating ground shielding layers and method for fabrication

An embedded microelectronic capacitor equipped with geometrically-centered electrodes which includes an upper electrode plate of a first polarity; a middle electrode plate of a second polarity opposite to the first polarity; at least one lower electrode plate of the first polarity in electrical communication with the upper electrode plate through a center via. The center via is positioned at a distance from a geometric center of the middle electrode plate of not larger than 50% of the diameter of the plate, and preferably not larger than 30% of the diameter.

Embedded microelectronic capacitor equipped with geometrically-centered electrodes and method of fabrication

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Yunghe, Taiwan

Pei-Shen Wei