United Microelectronics Corp.

Phison Electronics Corporation

Pei-Lin Kuo

Shih-Hsien Hsu

Jin-sheng Yang

Huo-Tieh Lu

A method and a system for processing data, and a storage device controller are provided. In the present method, a storage device is provided, and the storage device is coupled to a host. The method also includes, when the host gives a write-in command and the write-in command includes a logical accessing address and a first data, determining whether the logical accessing address is one of logical accessing addresses of file system information. When the logical accessing address is one of the logical accessing addresses of the file system information, the storage device writes a second data into the storage device at a predetermined time, and the second data is different from the first data.

Data processing method, data processing system, and storage device controller

A method of forming a strain-causing layer for MOS transistors is provided, which is applied to a substrate having a plurality of gate structures of the MOS transistors thereon. A non-conformal stressed film that is thicker on the gate structures than between the gate structures is formed over the substrate. The non-conformal stressed film is then etched, without an etching mask thereon, to remove portions thereof between the gate structures and disconnect the stressed film between the gate structures. At least one extra stressed film may be further formed over the substrate, wherein each extra stressed film has the same type of stress as the above stressed film and is connected or disconnected between the gate structures.

Growing community of inventors

Taichung, Taiwan

Pei-Lin Kuo