International Business Machines Corporation

Other

Pei-ing P Lee

John Edward Cronin

Carter W Kaanta

James Gardner Ryan

William J Cote

Terrance M Wright

Thomas L McDevitt

Paul Christian Parries

Rosemary A Previti-Kelly

Thomas J Hartswick

Michael A Leach

Jung H Yoon

David Craig Strippe

Thomas J Licata

Thomas Edwin Sandwick

Bernd M Vollmer

Scott L Pennington

Karey L Holland

Robert C Bausmith

Victor Vynorius

Stuart H Wolff

The present invention provides a conductive structure for use in semiconductor devices. The structure can be used to interconnect the various diffusion regions or electrodes of devices formed on a processed semiconductor substrate to a layer of metal, to interconnect overlying layers of metal or to provide the gate electrode of an FET device formed on the surface of a semiconductor substrate. Various embodiments of the invention are described, but in broad form the active metallurgy of the present invention comprises a thin continuous layer to titanium--titanium nitride and a thick layer of a refractory metal, e.g. tungsten, overlying the titanium nitride layer.

Refractory metal-titanium nitride conductive structures

A process for sputter deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures.

Method of depositing conductors in high aspect ratio apertures using a

Electrically conducting vias and lines are created by a three step process. First, a controlled amount of a soft, low resistivity metal (12) is deposited in a trench or hole to a point below the top surface of the dielectric (10) in which the trench or hole is formed. Subsequently, the low resistivity metal (12) is overcoated with a hard metal (16) such as CVD tungsten. Finally, chemical-mechanical polishing is used to planarize the structure. The hard metal (16) serves the function of protecting the low resistivity metal (12) from scratches and corrosion which would ordinarily be encountered if the low resistivity metal were subjected to the harsh chemical-mechanical polishing slurries. An ideal method for partially filling trenches or holes in a substrate is by sputtering at elevated temperatures such that metallization at the bottom of a trench or hole separates from metallization on a top surface adjacent the trench or hole. An etchback procedure may also be used to separate metallization in a trench or hole from metallization adjacent a trench or hole. Trenchs and holes may also be filled by selective deposition. In addition, trenches and holes may also be lined by a metal liner (18) prior to metallization (12) deposition which can serve as a diffusion barrier.

Refractory metal capped low resistivity metal conductor lines and vias

Disclosed is a process for producing multi-level conductor/insulator films on a processed semiconductor substrate having a conductor pattern. The insulator layers, each comprise a photosensitive polyimide polymer composition, and this allows the desired wiring channels and stud vias to be formed directly in the insulator layers, without the use of separate masking layers and resulting image transfer steps, thus providing a less cumbersome and costly process.

Process for forming multi-level coplanar conductor/insulator films

A method for forming reactive metal silicide layers at two spaced locations on a silicon substrate, which layers can be of different thicknesses and/or of different reactive metals is provided. A sililcon substrate has a silicon dioxide layer formed thereon followed by the formation of a polysilicon layer on the silicon dioxide layer, followed by forming a layer of refractory metal, e.g. titanium on the polysilicon. A non-reflecting material, e.g. titanium nitride is formed on the refractory metal. Conventional photoresist techniques are used to pattern the titanium nitride, the titanium and polysilicon, and the titanium is reacted with the contacted polysilicon to form a titanium silicide. The portion of silicon dioxide overlying the silicon substrate is then removed and the exposed substrate is ion implanted to form source/drain regions. A second layer of refractory metal, either titanium or some other refractory metal, is deposited over the source/drain region, and either over the titanium nitride, or over the first formed silicide by first removing the titanium nitride. The second layer of refractory metal is reacted with the substrate at the source/drain region to form a refractory metal silicide, after which the unreacted refractory metal is removed.

Process for forming refractory metal silicide layers of different

A process of forming a multi-level semiconductor metallization structure from a single deposit layer of metal. The process provides the versatility of allowing stud-up, stud-down, thick and/or thin metallization structure lines to be formed from the single layer of metal. The thick metallization structure lines are low resistance lines, and the thin metallization lines are low capacitance lines. The separation of the thin metallization lines from the semiconductor substrate can be controlled further to decrease capacitive effects.

Process for fabricating multi-level integrated circuit wiring structure

A method for dry etching metals that form low volatility chlordes, in which Z-Cl reaction products are controllably introduced into a conventional Cl-based plasma independent of the workpiece. The Z-Cl products (e.g., AlCl.sub.3, GaCl.sub.3, etc.) are metal chlorides that have both electron acceptor and chloride donor properties. Thus, metals M (e.g., cobalt, copper and nickel) that usually produce low volatility chlorides can be controllably complexed to form high volatility Z.sub.x Cl.sub.y M.sub.z reaction products.

Etching metal films with complexing chloride plasma

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Williston, VT, United States of America

Pei-ing P Lee