Playnitride Inc.

Pixeled Display Co., Ltd.

Pei-Hsin Chen

Yu-Chu Li

Yi-Ching Chen

Ying-Tsang Liu

Yi-Chun Shih

Tzu-Yang Lin

Yu-Hung Lai

Yun-Li Li

Chih-Chiang Lu

Yu-Yun Lo

Chih-Ling Wu

Po-Jen Su

Gwo-Jiun Sheu

Ching-Liang Lin

Huan-Pu Chang

A micro-LED display panel including a substrate, an anisotropic conductive film, and a plurality of micro-LEDs is provided. The anisotropic conductive film is disposed on the substrate. The micro-LEDs and the anisotropic conductive film are disposed at the same side of the substrate, and the micro-LEDs are electrically connected to the substrate through the anisotropic conductive film. Each of the micro-LEDs includes an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layers comprises a first electrode and a second electrode which are located between the substrate and the corresponding epitaxial layer. A ratio of a thickness of each of the electrode layers to a thickness of the corresponding epitaxial layer ranges from 0.1 to 0.5, and a gap between the first electrode and the second electrode of each of the micro-LEDs is in a range of 1 &#x3bc;m to 30 &#x3bc;m.

Manufacturing method of micro-LED display panel

A display panel includes a first substrate, a plurality of first color micro light emitting diodes (LEDs), a plurality of second color LEDs and a shading layer. The first substrate has a plurality of pixel zones arranged in an array form. Each of the first color LEDs has a first light emitting surface facing to a display direction. Each of the second color LEDs has a second light emitting surface facing to the display direction. Each of the pixel zones is provided with one of the first color micro LEDs and one of the second color LEDs. The shading layer is disposed in the pixel zones. The shading layer overlaps part of the first light emitting surface and part of the second light emitting surface in the display direction.

Display panel

A carrier structure suitable for transferring or supporting a plurality of micro devices including a carrier and a plurality of transfer units is provided. The transfer units are disposed on the carrier. Each of the transfer units includes a plurality of transfer parts. Each of the transfer parts has a transfer surface. Each of the micro devices has a device surface. The transfer surfaces of the transfer parts of each of the transfer units are connected to the device surface of corresponding micro device. The area of each of the transfer surfaces is smaller than the area of the device surface of the corresponding micro device. A micro device structure using the carrier structure is also provided.

Carrier structure and micro device structure

A transparent display panel with a light-transmitting substrate, a plurality of top-emitting micro light emitting diodes, a plurality of bottom-emitting micro light emitting diodes, and a light shielding layer. The light transmissive substrate has a surface. These top-emitting micro light emitting diodes and these bottom-emitting micro light emitting diodes are disposed on the surface of the light transmissive substrate. The bottom-emitting micro light emitting diodes has an epitaxial structure and a light shielding member, the epitaxial structure has a pair of upper and lower surfaces on the opposite sides, the lower surface faces toward the light transmissive substrate, and the light shielding member is disposed on the upper surface to shield the light emitted by the bottom-emitting micro light emitting diodes towards the upper surface.

Transparent display panel

A micro LED display panel includes a display area, a plurality of micro light-emitting elements and a plurality of micro control elements. The plurality of micro light-emitting elements is disposed in the display area and include a plurality of first color micro LEDs and a plurality of second color micro LEDs. A light wavelength of each of the first color micro LEDs is different from a light wavelength of each of the second color micro LEDs. The plurality of micro control elements is disposed in the display area, and include a plurality of first color micro circuit-chips and a plurality of second color micro circuit-chips. The plurality of first color micro circuit-chips control the plurality of first color micro LEDs, and the plurality of second color micro circuit-chips control the plurality of second color micro LEDs.

Micro light-emitting diode display panel having control element for controlling multiple micro light-emitting diodes emitting the same color

A micro light-emitting device includes an epitaxial structure, a first type pad, a current commanding structure and an insulating layer. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer. The first type pad is disposed on the epitaxial structure and electrically connected to the first type semiconductor layer. The current commanding structure is disposed on the epitaxial structure and electrically connected to the second type semiconductor layer. An orthogonal projection area of the current commanding structure on the second type semiconductor layer is smaller than a surface area of a surface of the second type semiconductor layer. The insulating layer contacts a portion of the current commanding structure and a portion of the surface of the second type semiconductor layer. The insulating layer has an opening exposing at least a portion of the portion of the current commanding structure.

Micro light-emitting device and display apparatus

A display substrate comprises a base board and a first bonding pad. The base board comprises a first surface having a first bonding district. The first bonding pad is disposed on the first surface. The first bonding pad is configured to electrically connect to a first electrode of a light emitting component in the first bonding district. The first bonding pad comprises a main bonding portion and an auxiliary bonding portion, wherein at least a part of an orthogonal projection of the main bonding portion on the base board is in the first bonding district. The auxiliary bonding portion electrically connects to the main bonding portion, wherein at least a part of an orthogonal projection of the auxiliary bonding portion on the base board is outside the first bonding district. There is a gap between the main bonding portion and the auxiliary bonding portion.

Display substrate and display panel

A display panel of micro light emitting diode comprises a substrate, a plurality of micro light emitting diodes, a plurality of driving chips and a shading layer. The substrate having a first surface and a display area. The plurality of micro light emitting diodes is disposed on the first surface of the substrate and is located in the display area, with each of the micro light emitting diodes having a light emitting surface while the light emitting surface is away from the first surface of the substrate. The plurality of driving chips is disposed on the first surface of the substrate and is located in the display area, with each driving chip electrically connecting to at least one of the micro light emitting diodes. The shading layer is disposed on the first surface of the substrate and covering the driving chips while exposing the light emitting surfaces.

Display panel of micro light emitting diode

A display panel comprises a first substrate and a shading layer. The first substrate comprises a plurality of pixel zones arranging in an array form. Each of the pixel zones comprises a first color LED and a second color LED. The first color LED comprise a first light-emitting surface in a display direction. The second color LED comprise a second light-emitting surface in the display direction. An area of the first light-emitting surface is larger than an area of the second light-emitting surface. The shading layer is disposed in the plurality of pixel zones, and the shading layer overlaps some of the first light-emitting surfaces at the display direction.

Micro-LED display panel and manufacturing method thereof

A micro LED display panel comprises a substrate, a plurality of light emitting components, an insulating layer and a plurality of electrical components. The substrate comprises a first surface. The light emitting components are disposed on the first surface. The insulating layer is on the plurality of light emitting components and has a second surface and a third surface opposite to each other. The second surface faces the first surface. The electrical components are disposed on the third surface and electrically connect to the light emitting components. The number of the electrical components is less than the number of the light emitting components. The roughness of the third surface is greater than the roughness of the first surface.

Micro LED display panel and manufacturing method thereof

A method of transferring micro devices is provided. A carrier substrate including a buffer layer and a plurality of micro devices is provided. The buffer layer is located between the carrier substrate and the micro devices. The micro devices are separated from one another and positioned on the carrier substrate through the buffer layer. A receiving substrate contacts the micro devices disposed on the carrier substrate. A temperature of at least one of the carrier substrate and the receiving substrate is changed after the micro devices contact the receiving substrate. At least a portion of the micro devices are transferred from the carrier substrate onto the receiving substrate after changing the temperature of at least one of the carrier substrate and the receiving substrate.

Method of transferring micro devices

A light emitting diode display includes a plurality of display units and a plurality of auxiliary display units. The display units are arranged in an array and connected to each other. Each of the display units has a device arrangement region, a peripheral region surrounding the device arrangement region, and a plurality of first light emitting devices disposed on the device arrangement region and arranged in an array. The auxiliary display units are disposed on the peripheral regions of the display units. Each of the auxiliary display units includes an auxiliary substrate and a plurality of second light emitting devices arranged in an array. The second light emitting devices are disposed on the auxiliary substrate and located at a level different from a level of the first light emitting devices. Each of the auxiliary substrates is across adjacent two of the display units.

Light emitting diode display

A micro-LED display panel including a substrate, a plurality of micro-LEDs, and a plurality of reinforced structures is provided. The micro-LEDs are disposed at a side of the substrate, wherein each of the micro-LEDs comprises an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layer are located between the epitaxial layers and the substrate. Each of the micro-LEDs is electrically connected to the substrate through the corresponding electrode layer. Each of electrode layers includes a first electrode and a second electrode. The reinforced structures are disposed between the micro-LEDs and the substrate respectively, and each of the reinforced structures is located between the corresponding the first electrode and the second electrode. A Young's modulus of each of reinforced structures is smaller than a Young's modulus of the corresponding electrode layer.

Micro-LED display panel

A micro light-emitting device includes an epitaxial structure, a first type pad, a second type pad, and a current commanding structure. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer. The first type pad is electrically connected to the first type semiconductor layer. The second type pad is electrically connected to the second type semiconductor layer. The current commanding structure is disposed between the second type semiconductor layer and the second type pad. A contact resistance between the second type semiconductor layer and the current commanding structure is smaller than a contact resistance between the second type semiconductor layer and the second type pad. An orthogonal projection area of the current commanding structure on the second type semiconductor layer is smaller than an orthogonal projection area of the second type pad on the second type semiconductor layer.

Growing community of inventors

Tainan, Taiwan

Pei-Hsin Chen