United Microelectronics Corp.

Pei-Ching Yeh

Shin-Chi Chen

Chih-Yueh Li

Tsung-Chieh Yang

An-Chi Liu

Chih-Chung Chen

Chih-Jen Lin

A method of removing a fin structure includes providing a substrate. A fin structure extends from the substrate. A mask layer is disposed on a top surface of the fin structure. An organic dielectric layer covers the substrate, the fin structure and the mask layer. A first etching process is performed to entirely remove the mask layer by taking the organic dielectric layer as a mask. Then a second etching process is performed to remove the fin structure. The first etching process is preferably an anisotropic etching process, and the second etching process is an isotropic etching process.

Insulating layer next to fin structure and method of removing fin structure

A semiconductor pattern structure includes a substrate, an input/output (I/O) region defined on the substrate, a core region defined on the substrate, a dummy region defined on the substrate, and a gate electrode formed on the substrate. The dummy region is formed between the I/O region and the core region. The gate electrode crosses the I/O region and covers a portion of the dummy region.

Semiconductor structure including dummy structure and semiconductor pattern structure including dummy structure

Growing community of inventors

Changhua County, Taiwan

Pei-Ching Yeh