International Business Machines Corporation

Pei-Ching Li

Henry C Schick

Donald A MacKinnon

Disclosed is a method of treating the surface of a molybdenum mask used for screening a metallized paste pattern to render it smooth and preserve the mask's hardness. The treatment consists of subjecting the mask to a nitridation step by which an ultrathin layer of molybdenum layer is first formed, followed by deposition of a comparatively thick silicon nitride layer thereon. The nitridation step may be accomplished in a plasma deposition system using either forming gas, ammonia or gas mixture of nitrogen and ammonia at a predetermined low temperature and pressure. The silicon nitride deposition may be accomplished in the same system at the same temperature and pressure by substituting the gas utilized to form the molybdenum nitride with a gaseous mixture of silane and one of nitrogen and ammonia.

Surface treatment of a molybdenum screening mask

A composition is described which comprises amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction chamber is maintained at a temperature between about 400.degree.-900.degree. C. with a suitable substrate placed therein. Reaction gases containing phosphorus-nitrogen-bearing compounds and a source of oxygen are passed through the chamber to deposit the phosphorus-nitrogen-oxygen film onto the substrate.

Phosphorus-nitrogen-oxygen composition and method for making such

Method for etching a phosphorus-nitrogen-oxygen coating

A method is described which forms amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction chamber is maintained at a temperature between about 400.degree.-900.degree. C. with a suitable substrate placed therein. Reaction gases containing phosphorus-nitrogen-bearing compounds and a source of oxygen are passed through the chamber to deposit the phosphorus-nitrogen-oxygen film onto the substrate.

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Hopewell Junction, NY, United States of America

Pei-Ching Li