E Ink Holdings Inc.

Tsinghua University

National Yang Ming Chiao Tung University

Pei-Chen Yu

Hsiao-Wen Zan

Chuang-Chuang Tsai

Chia-Chun Yeh

Wei-Tsung Chen

Hao-Chung Kuo

Ming-Yen Chuang

Chia-Hua Chang

Ching-Hua Chiu

Ci-Ling Pan

Tsung-Ta Tang

Chan-Shan Yang

Hung-Chuan Liu

Ru-Pin Pan

Chin-Sheng Yang

Bing-Shu Wu

Yi-Chun Lai

The invention provides a liquid crystal based optoelectronic device, including an upper substrate and a lower substrate, a liquid crystal layer sandwiched between the upper substrate and the lower substrate, and a pair of indium tin oxide nano-whisker layers formed on the inner surfaces of the upper substrate and the lower substrate, wherein the indium tin oxide nano-whisker layer is used as an alignment layer for aligning liquid crystal molecules in the liquid crystal layer.

Liquid crystal based optoelectronic device

A semiconductor sensing device that includes a nanowire conductive layer, a semiconductor sensing layer, and a conductive layer is provided. The nanowire conductive layer includes a plurality of connected conductive nanowires, and gaps are formed between the conductive nanowires. The semiconductor sensing layer is electrically connected to the nanowire conductive layer. The conductive layer is electrically connected to the semiconductor sensing layer. The semiconductor sensing layer is located between the nanowire conductive layer and the conductive layer. A manufacturing method of a semiconductor sensing device is also provided.

Semiconductor sensing device comprising conductive nanowires and manufacturing method thereof

An active device provided by the invention is disposed on a substrate and includes a gate, a gate insulating layer, an oxide semiconductor channel layer, a plurality of nano conductive wires, a source and a drain. The gate insulating layer is disposed between the gate and the oxide semiconductor channel layer. The nano conductive wires are distributed in the oxide semiconductor channel layer, in which the nano conductive wires do not contact the gate insulating layer and the nano conductive wires are arranged along a direction and not intersected with each other. The source and the drain are disposed on two sides opposite to each other of the oxide semiconductor channel layer, in which a portion of the oxide semiconductor channel layer is exposed between the source and the drain.

Active device

A method of forming thin-film structure by oblique-angle deposition is provided. The method includes the steps of: evaporating target source in a chamber by an electron beam evaporation system, and introducing process gas into the chamber and adjusting tilt angle of the evaporation substrate and controlling temperature in the chamber during evaporation to form thin-film on a evaporation substrate by oblique-angle deposition, and then annealing the evaporation substrate to form a thin-film having porous nanorod microstructure.

Method of forming thin-film structure by oblique-angle deposition

Growing community of inventors

Hsinchu, Taiwan

Pei-Chen Yu