Electronics and Telecommunications Research Institute

Alma Mater Studiorum-Universitá Di Bologna

Jozef Stefan Institute

Universidad De Barcelona

Universidade Nova De Lisboa

Faculdade De Ciencias E Tecnologia Da Universidade Nova De Lisboa

Faculdade De Ciencias E Technologia Da Universidade Nova De Lisboa

Faculdad De Ciencias E Tecnologia Da Universidad Nova De Lisboa

Pedro Miguel Cândido Barquinha

Elvira Maria Correia Fortunato

Rodrigo Ferrão De Paiva Martins

Luís Miguel Nunes Pereira

Nuno Filipe De Oliveira Correia

Chi-Sun Hwang

Beatrice Fraboni

Rodrigo Ferräo De Paiva Martins

Danjela Kuscer Hrovatin

Marija Kosec

Ana Raquel Xarouco De Barros

Vitor Manuel Loureiro Figueiredo

Tobias Cramer

Sang-Hee Ko Park

Gonçalo Pedro Gonçalves

Rodrigo FERRÃO De Paiva Martins

The present invention concerns a sensitive field effect device () comprising a semiconductor channel (), a source electrode () connected to said semiconductor channel (), a drain electrode () connected to said semiconductor channel (), such that said semiconductor channel () is interposed between said source electrode () and said drain electrode (), a gate electrode () and a dielectric layer () interposed between said gate electrode () and said semiconductor channel (), characterized in that said semiconductor channel () is a layer and is made of an amorphous oxide and in that said sensor means () are configured to change the voltage between said gate electrode () and said source electrode () upon a sensing event capable of changing their electrical state. The present invention also concerns a sensor and a method for manufacturing said field effect device ().

Sensitive field effect device and manufacturing method thereof

The present invention refers to the use and creation of materials based on natural cellulose fibbers, synthetic fibbers, or mixed fibbers as physical support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-effect transistors with non-volatile memory by using organic or inorganic active semiconductors for the manufacture of the channel regions that are deposited on the fibbers of the paper material as well as metals or passive semiconductors for manufacturing drain and source allowing the interconnection of fibbers, in addition to the gate electrode contact existing on the other side-face of the paper, p or n type respectively, in monolithic or hybrid forms.

Process for using and producing paper based on natural cellulose fibers, synthetic fibers or mixed fibers as physical support and storing medium for electrical charges in self-sustaining field-effect transistors with memory using active semiconductor oxides

The present invention relates to thin films comprising non-stoichiometric monoxides of: copper (OCu)with embedded cubic metal copper (Cu) [(OCu)+(Cu), wherein 0.05&#x2266;x&#x3c;1 and 0.01&#x2266;y&#x2266;0.9]; of tin (OSn)with embedded metal tin (Sn) [(OSn)+(Sn)wherein 0.05&#x2266;z&#x3c;1 and 0.01&#x2266;w&#x2266;0.9]; Cu&#x2014;Snalloys with embedded metal Sn and Cu [(O&#x2014;Cu&#x2014;Sn)+(Cu&#x2014;Sn)with 0&#x3c;&#x3b1;&#x3c;2 and 0&#x3c;&#x3b2;&#x3c;2, wherein 0.05&#x2266;a&#x3c;1 and 0.01&#x2266;b&#x2266;0.9]; and of nickel (ONi)with embedded Ni and Sn species [(O&#x2014;Ni)+(Ni&#x2014;Sn)with 0&#x3c;&#x3b1;&#x3c;2 and 0&#x3c;&#x3b2;&#x3c;2, wherein 0.05&#x2266;a&#x3c;1 and 0.01&#x2266;b&#x2266;0.9]; or combinations thereof, with amorphous, or nanocrystalline, or polycrystalline structure, either doped or not, with impurities such as zirconium, nitrogen or fluorine, for the fabrication of CMOS or TFT devices, with active matrices for LCD or OLED, fabrication of logic circuits, among others, using rigid or flexible substrates, wherein a protection layer, such as SU8 or the like, or silicon oxide or silicon nitride films are used for encapsulation.

P-type oxide alloys based on copper oxides, tin oxides, tin&#x2014;copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof

High performance thin-film, transistors are entirely processed at temperatures not exceeding 150&#xb0; C., using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The sputtered or ink jet printed mixed dielectric materials such as TaOwith SiOor AlOor HfOwith SiOor AlOare used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga&#x2014;In&#x2014;Zn oxide as channel layers and where the dielectric was the combination of the mixture TaO:SiO, exhibiting field-effect mobility exceeding 35 cmVs, close to 0 V turn-on voltage, on/off ratio higher than 10and subthreshold slope below 0.24 V dec.

Amorphous multicomponent dielectric based on the mixture of high band gap and high K materials, respective devices and manufacture

Growing community of inventors

Montijo, Portugal

Pedro Miguel Cândido Barquinha