Spansion LLC.

Pedro A Sanchez

Allan Parker

Frederick Charles Neumeyer

Matthew Ronald Croft

Iftekhar Rahman

Greg Yancey

A method, apparatus, and manufacture for a memory device is provided. The memory device includes memory cells that each store two bits, and a memory controller. During write operations, for each bit in each memory cell that is to be programmed, the memory controller determines whether both bits of the memory cell are being programmed. While controlling an application of programming pulses to the memory cell to program the bit, if both bits of the memory cell are being programmed, the memory controller causes the application of each programming pulse to the bit to occur for a reduced duration. Otherwise, the memory controller causes the application of each programming pulse to the bit to occur for a standard duration. The reduced duration is less than three-fourths of the standard duration.

Method, apparatus, and manufacture for flash memory write algorithm for fast bits

Methods and systems for addressing threshold voltage shifts of memory cells. A method includes reading a pattern of data from a first plurality of memory cells, comparing the read of the pattern of data with a known pattern of data using a reference, and if the read of the pattern of data and the known pattern of data do not match, adjusting the reference to find a reference level that results in a matching of a read of the pattern of data and the known pattern of data. Thereafter, trim sector data is read into a second plurality of memory cells using the adjusted reference level.

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Austin, TX, United States of America

Pedro A Sanchez