Motorola Corporation

Pawitter Jit Singh Mangat

William J Dauksher

James R Wasson

Scott Daniel Hector

Matthew A Thompson

Philip Armin Seese

A method of manufacturing a semiconductor component includes providing a semiconductor substrate ( ) with a photoresist layer and providing a reflective lithographic mask ( ) having a radiation-absorptive composite layer ( ) in a pattern over a radiation-reflective composite layer ( ). A radiation sensitive layer is disposed over the semiconductor substrate, and an extreme ultra-violet light ( ) reflects a pattern off of the mask and onto the photoresist layer.

Method of manufacturing a semiconductor component

A method of forming a semiconductor device by obtaining a substrate, with a first surface and a second surface, where the substrate has a first material and a second material separated by an etch stop. A membrane film is deposited on the first surface of the substrate and the substrate is patterned to form an opening through the second surface and through the second material to the etch stop layer. The etch stop layer and the first material in the opening are then patterned to form the semiconductor device. This method may be used to form a lithographic mask and further embodiments of the present invention.

Method of forming mask with angled struts of reduced height

A etcher (,) has an inner chamber (,) that is in communication with a collection chamber (,). A cover (,) is made from a substrate (,) and an outer housing (,). The cover (,) is attached to the etcher (,) so that the substrate (,) is suspended over the inner chamber (,). A recirculating system (,) is used to pass an etchant through a filter, into the inner chamber (,), across the substrate (,), into the collection chamber (,), and into a reservoir.

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Chandler, AZ, United States of America

Pawitter Jit Singh Mangat