Sandisk Technologies Inc.

Pawan Negi

Bhavadip Bipinbhai Solanki

Meer Afroz Mohammed

Gopu S

Subin Cp

A memory device includes a wordline zone table that stores information about how wordlines of one or more memory blocks are divided into wordline zones. The wordline zone table also stores a value associated with each wordline zone. When the memory device receives a command, a controller identifies a wordline associated with the command. The controller uses the wordline zone table to determine the wordline zone, and the value, associated with the wordline. The value is stored in a non-data wordline. When a find last good page (FLGP) process is initiated in response to an ungraceful device shutdown (UGDS) event, the controller determines the value stored in the non-data wordline. The controller compares the value in the non-data wordline to the values in the wordline zone table to determine which wordline zone matches the value. The FLPG process is applied to the wordline zone having the matching value.

Using a zone wordline table to initiate a find last good page process

A data storage device can check data integrity on a wordline in memory each time the data storage device exits a low-power mode. Frequent exits from the low-power mode result in the wordline being read many times, which can result in a read disturb problem. To mitigate this problem, in one embodiment disclosed herein, a different wordline is used to check data integrity each time of a plurality of times that the data storage device exits a low-power mode. Using different wordlines for the data integrity check can reduce the likelihood of a read disturb error. Other embodiments are disclosed.

Data storage device and method for read disturb mitigation during low-power modes

Different pages of a quad-level cell (QLC) memory can have different data retention characteristics. A controller of a data storage device can store selected data in relatively-lower data retention pages of the QLC block. For example, data for an internal data storage device operation can be stored in the relatively-lower data retention pages of QLC memory, and host data can be stored in the relatively-higher data retention pages of QLC memory. Other examples are provided.

Data storage device and method for storing selected data in relatively-lower data retention pages of a quad-level cell memory

A data storage device initially stores incoming data from a host in single-level cell (SLC) blocks and later folds the data from those blocks into a multi-level cell (MLC) block. If an error is detected during the folding operation, the data storage device pauses the folding operation, programs data that failed to be program and other data from the initial SLC blocks into another SLC block, and then resumes the folding operation. This can be part of a dynamic runtime zoning process where the data storage device determines a set of wordlines that will fall under one zone at runtime during an enhanced post-write-read (EPWR) operation.

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Pawan Negi