Philips Electronics North America Corporation

Pawan Gogna

Peter J Janssen

Srinagesh Satyanarayana

An electro-optic display device having a matrix array of picture elements and a thin film structure of storage capacitors associated with each picture element, the device provided with redundancy in the storage capacitor structure by segmenting one of the capacitor plates into two plates to produce two capacitors in series. Because the segmented plates are all on one level of the thin film structure, no additional masking steps are required.

Electro-optical display having split storage capacitor structure for series capacitance

A reflective liquid crystal display such as an AMLCD includes an array of reflective pixels located over a surface of a silicon substrate, with light transmissive regions being located between the reflective pixels. The structure includes two metal layers between the reflective pixels and the silicon substrate surface, with segments of one metal layer extending in a first direction to form row electrodes of the LCD and segments of the other metal layer extending in a second direction substantially perpendicular to the first to form column electrodes of the LCD. In order to block light that would otherwise pass through light transmissive regions between the reflective pixels, portions of the first two metal layers extend beneath the light transmissive regions between the reflective pixels. In this manner, a light-blocking function is provided without the need for a separate blocking or shading metal layer.

Reflective liquid crystal display having integral light shielding

A method of biasing an MOS IC includes the steps of providing the IC with two MOS transistors having substantially similar characteristics and maintaining these two transistors at different temperatures. During operation of the IC, an output voltage is generated from each of the two transistors, and a bias voltage is generated as a function of the difference between the two output voltages. This bias voltage is then fed back to the gate terminals of the two MOS transistors to set the bias voltage to a steady-state level at which the circuit will operate at a zero temperature coefficient point. This bias voltage is also coupled to the gate electrodes of other transistors within the IC, to operate these transistors at the zero temperature coefficient point. An IC operated in accordance with biasing method will exhibit superior stability with variations in ambient temperature.

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Yorktown Heights, NY, United States of America

Pawan Gogna