Taiwan Semiconductor Manufacturing Comp. Ltd.

Pavithra Sriram

Hao-Yi Tsai

Hung-Jui Kuo

Yu-Hsiang Hu

Yu-Chia Lai

Po-Han Wang

Po-Yuan Teng

Kuo-Lung Pan

Shu-Rong Chun

Mao-Yen Chang

Wei-Kang Hsieh

Ting Hao Kuo

Cheng-Chieh Wu

A semiconductor device includes semiconductor dies and a redistribution structure. The semiconductor dies are encapsulated in an encapsulant. The redistribution structure extends on the encapsulant and electrically connects the semiconductor dies. The redistribution structure includes dielectric layers and redistribution conductive layers alternately stacked. An outermost dielectric layer of the dielectric layers further away from the semiconductor dies is made of a first material. A first dielectric layer of the dielectric layers on which the outermost dielectric layer extends is made of a second material different from the first material. The first material includes at least one material selected from the group consisting of an epoxy resin, a phenolic resin, a polybenzooxazole, and a polyimide having a curing temperature lower than 250° C.

Semiconductor device and manufacturing method thereof

Growing community of inventors

Hsinchu, Taiwan

Pavithra Sriram