Applied Materials, Inc.

Pavel Staryuk

Tetsuya Ishikawa

Hiroji Hanawa

Tom K Cho

Michael P Karazim

Rudolf Gujer

Michael Douglas

Abhi Desai

Thomas Kring

The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

Dome: shape and temperature controlled surfaces

The present invention provides exemplary antenna coil assemblies and substrate processing chambers using such assemblies. In one embodiment, an antenna coil assembly (,) for a substrate processing chamber includes an antenna coil (,) disposed in a frame (,). The frame includes a plurality of spaced apart tabs (,) around a periphery of the frame, with the coil coupled to the frame at the tabbed locations. At least one notch (,) is provided between each pair of adjacent tabs. The notches are adapted to facilitate thermal expansion and contraction of the frame at the notched locations to reduce stresses on the frame and coil connections.

Antenna coil assemblies for substrate processing chambers

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San Jose, CA, United States of America

Pavel Staryuk