Intel Corporation

Lodestar Licensing Group LLC

Pavan Kumar Reddy Aella

Kolya Yastrebenetsky

Masuji Honjo

Fatma Arzum Simsek-Ege

Srikant Jayanti

Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.

Apparatuses including insulative structures of stack structures having different portions and related memory devices

A memory cell can include a top lamina layer, a bottom lamina layer, and a phase change material (PCM) layer between the top lamina layer and the bottom lamina layer. The PCM layer can have a top surface in direct contact with the top lamina layer and a bottom surface in direct contact with the bottom lamina layer. The top surface of the PCM layer and the bottom surface of the PCM layer can have a structurally stabilizing width ratio.

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Eagle, ID, United States of America

Pavan Kumar Reddy Aella