Xilinx, Inc.

Prolinx Labs Corporation

Unicap Electronics Industrial Corporation

Other

Paul Y Wu

Steve S Chiang

James J Lan

William H Shepherd

John Y Xie

Christopher Paul Wyland

Suresh Ramalingam

Romi Mayder

Richard J Nathan

Hang Jiang

Scott Chen

Robert Osann, Jr

Atul V Ghia

Henley Liu

Paul T Sasaki

Namhoon Kim

Richard L Wheeler

Jian Tan

Woon-Seong Kwon

Ketan Sodha

Raymond E Anderson

Khaldoon S Abugharbieh

Joseph T Walsh, Jr

Soon-Shin Chee

Dong P Kim

Sanjiv Stokes

Ray Chen

Joong-Ho Kim

Sarajuddin Niazi

Gregory Meredith

Yong Wang

Jeff Chang

Jane Lu

Jonny Ma

Manoj Nachnani

Edward Huang

Dennis CP Leung

An apparatus for placement between a package and an integrated circuit board includes: an insert having: a substrate having a top side and a bottom side; a first set of pads at the top side of the substrate; a second set of pads at the bottom side of the substrate; and a plurality of vias in the substrate, the vias connecting respective pads in the first set to respective pads in the second set; wherein the insert has a thickness that is less than a spacing between the package and the integrated circuit board.

Low insertion loss package pin structure and method

In one embodiment, an integrated circuit (IC) includes a power distribution network having a first set of power distribution lines connected to a source voltage and a second set of power distribution lines connected to a ground voltage, and a first capacitor. A first variable resistive element is electrically coupled in series with the first capacitor between the first and second sets of power lines of the power distribution network. A control circuit is coupled to the variable resistive element and is configured and arranged to adjust a level of resistance of the first variable resistive element in response to an input signal. The adjustment of the level of resistance adjusts an equivalent series resistance of the power distribution network.

Dynamic configuration of equivalent series resistance

An embodiment of an apparatus to reduce supply voltage noise with capacitors of an interposer of a stacked die is disclosed. In this embodiment, an interposer is coupled to a first integrated circuit die using a first plurality of interconnects. A substrate is coupled to the interposer using a second plurality of interconnects. The substrate includes a supply voltage plane and a ground plane, each of which is coupled to the first integrated circuit die using the second plurality of interconnects, the interposer, and the first plurality of interconnects. The interposer includes capacitors coupled in parallel using the supply voltage plane, the ground plane, and the second plurality of interconnects, where capacitance from capacitors of the interposer is provided to the first integrated circuit die using the supply voltage plane and the ground plane of the substrate.

Capacitors within an interposer coupled to supply and ground planes of a substrate

An electrical circuit structure can include a first trace formed using a first conductive layer and a second trace formed using a second conductive layer. The first trace can be vertically aligned with the second trace. The electrical circuit structure can include a via segment formed of conductive material in a third conductive layer between the first conductive layer and the second conductive layer. The via segment can contact the first trace and the second trace forming a first conductor structure configured to convey an electrical signal in a direction parallel to the first conductive layer.

Conductor structure with integrated via element

An integrated circuit includes a stacked conductive layer interposer and a first die at least partially encapsulated in a mold material. The first die is mechanically and electrically attached to a top surface of the stacked conductive layer interposer using solder bumps. The integrated circuit further includes a first warpage correction layer.

Warpage management for fan-out mold packaged integrated circuit

An interconnect array is described. The interconnect array comprises a pattern of adjacent interconnect tiles, each interconnect tile comprising ten interconnect locations including eight I/O signal connectivity locations forming a perimeter array having a corner I/O signal connectivity location, a center connectivity location surrounded by the eight I/O signal connectivity locations in the perimeter array being a first ground connectivity location or a power connectivity location, and a second ground connectivity location adjacent to the corner I/O signal connectivity location of the perimeter array and externally offset from the perimeter array to form an asymmetrically shaped interconnect tile. At least one interconnect tile of the pattern of adjacent interconnect tiles has a center connectivity location that is a power connectivity location.

Interconnect pattern for semiconductor packaging

A silicon substrate has a conductive via extending from a first surface of the silicon substrate through the silicon substrate to a second surface of the silicon substrate. A dielectric via extends from the second surface of the silicon substrate toward the first surface of the silicon substrate.

Air through-silicon via structure

In one embodiment, an integrated circuit (IC) is presented. The IC includes first and second sets of power distribution lines formed in the IC. The IC includes first and second capacitors formed in one or more layers of the IC. A first plurality of vias couple a first input of the first and second capacitors to the first set of power distribution lines, and a second plurality of vias couple a second input of the first and second capacitors to the second set of power distribution lines. The first capacitor and the first plurality of vias and the second plurality of vias coupled thereto having an equivalent series resistance greater than an equivalent series resistance of the second capacitor and the first plurality of vias and the second plurality of vias coupled thereto.

Power distribution network

A semiconductor device package and methods of manufacturing the same are described. In some examples, a semiconductor device includes an IC die including a ring of die pads around a periphery thereof, lands disposed within the ring of die pads, bond terminals coupled to the lands, the bond terminals being wire-bonded to respective ones of the die pads, and at least one capacitor having respective terminals mounted to respective ones of the lands.

Semiconductor device package and methods of manufacturing the same

A method of visually quantifying a test material along with an imaging apparatus for practicing the method is disclosed. The method comprises: (a) illuminating the test material at a known angle of incidence with diffuse light of a known and adjustable polarization state; (b) receiving light from the test material with a polarization state modified by the test material; (c) measuring an intensity of the polarization components of the received light for each illuminated pixel substantially simultaneously; (d) calculating the Stokes Vector in two dimensions for each illuminated pixel; and (e) creating an image map for the known polarization state. The method may also include adjusting the known polarization or the incident angle of the diffuse light to create additional image maps. The method and apparatus are intended for use in medical imaging including minimally invasive surgery.

System and method for imaging sub-surface polarization-sensitive material structures

A method of making a thermally enhanced BGA substrate in which a metal (copper) core, has dielectric layers applied to each side thereof and conductive through-core build-up vias are provided. Rigidifying non-conductive dielectric sheets are laminated to the oppositely facing surfaces and then conductive layers are applied to at least one of the rigidifying non-conductive sheets and via connections are made through the dielectric layer(s) to the core conductive layer.

Method of making metal core substrate printed circuit wiring board enabling thermally enhanced ball grid array (BGA) packages

A process for forming a burrless castellation for a plastic chip carrier comprising forming one or more through holes in a substrate, plating the through holes with a metal to a thickness ranging from about 2 microns to about 6 microns, routing slots along the line extending through the through holes to produce half cylinder-shaped side-contact surfaces, and plating the half cylinder-shaped side-contact surfaces to a thickness in the range of 15 to 25 microns.

Process and structure for manufacturing plastic chip carrier

An integrated circuit (IC) package substrate has a dielectric layer and a micro filled via formed substantially in the center of a hole in the dielectric layer. The IC package substrate has at least one chip bonding pad and one ball attach pad that are electrically coupled to each other by the micro filled via. The micro filled via is formed of a material called a 'micro filled via material' that includes a binding material and optionally includes a number of particles (between 0%-90% by volume) dispersed in the binding material. The binding material can be any material, such as a polymer that is either conductive or nonconductive. The particles can be formed of any conductive material, such as a conductive polymer or a conductive metal (e.g. copper or gold). An electrical conductor can be originally formed simply by contact between conductive particles located adjacent to each other. In an optional step, the micro filled via is subjected to a programming current (in a step called 'programming') to lower the resistance of an originally formed electrical conductor, or to originally form an electrical conductor by break down of a dielectric material. The IC package substrate can be formed in either a cavity up or a cavity down configuration.

Ball grid array structure and method for packaging an integrated circuit

A structure includes a support layer formed of a conductive material, such as a sheet of copper. The support layer has a number of conductive islands isolated from other portions of the support layer by isolation gaps. The support layer is sandwiched between two compound layers each of which is formed of a dielectric layer having a number of via holes and conductive elements located in the via holes. The conductive elements are formed at predetermined locations such that a conductive element in each compound layer contacts a conductive island in the support layer. The structure also includes two conductive layers formed on the two respective compound layers such that a trace in a first conductive layer is coupled to a trace in a second conductive layer through two conductive elements in the respective two compound layers and an island in the support layer. Such a structure can be formed by a number of processes. For example, the support layer can be formed by etching a sheet of conductive material, the compound layers can be formed by placing a conductive paste in via holes in a dielectric layer, and the conductive layers can be formed by lamination followed by etching to form traces.

Method for supporting one or more electronic components

A multilayered structure, such as a printed circuit board, includes a first conductive layer and a second conductive layer that are separated from each other by a dielectric layer. The dielectric layer is formed of a first material, such as a photoimagible polyimide and epoxy resin. The dielectric layer has a number of via holes that extend from the first conductive layer to the second conductive layer. The via holes are filled with a second material having a breakdown voltage less than a breakdown voltage of the first material included in the dielectric layer to form an antifuse. The second material in the via holes can be, for example, a conductive epoxy resin or a polymer loaded with conductive particles (also referred to as 'conductive paste').

Growing community of inventors

Saratoga, CA, United States of America

Paul Y Wu