Sigma-Aldrich Co. LLC

Paul Williams

Peter Nicholas Heys

Fuquan Song

Rajesh Odedra

Shaun Garratt

Andrew Kingsley

Thomas Leese

Hywel Owen Davies

Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein:

Methods of atomic layer deposition using titanium-based precursors

Precursors suitable for chemical vapor deposition, especially ALD, of hafnium oxide or zirconium oxide, have the general formula:(RCp)MRwherein Cp represents a cyclopentadienyl ligand, Ris H or a substituting alkyl group, alkoxy group or amido group of the Cp ligand, Ris an alkyl group, an alkoxy group or an amido group and M is hafnium or zirconium.

Use of cyclopentadienyl type hafnium and zirconium precursors in atomic layer deposition

Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: 

Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula II: wherein: M is Hf or Zr; R is C-C-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C-C-alkoxy. Further methods are provided of forming a metal-containing film by liquid injection atomic layer deposition. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula III: wherein: M is Hf or Zr; R is C-C-alkyl; n is zero, 1, 2, 3, 4 or 5; L is amino, wherein the amino is optionally independently substituted 1 or 2 times with C-C-alkyl.

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Wirral, United Kingdom

Paul Williams