Honeywell G.m.b.h.

Paul W Kruse, Jr

R Andrew Wood

Norman A Foss

John F Ready

Muhammad A Khan

A thin film pyroelectric imaging array fabricated as a Si wafer. A thin film of PbTiO.sub.3 is deposited on a thermally isolated bridge. The bridge suspends the PbTio.sub.3 sensor over a preferentially etched cavity in the Si wafer. Improved thermal isolation increases the responsivity of the sensor to incident radiation. The pyroelectric sensor formed can operate effectively at room temperature.

Thin film pyroelectric imaging array

A photon detector based upon photon-assisted tunneling in superconductor-insulator-superconductor or super-Schottky structures, in which the superconductor is a high transition temperature superconductor. An electrical bias is provided on either side of such structures so that photo-assisted tunneling, in the presence of incident photons on the structure, can occur to thereby permit a tunneling current therebetween.

Wavelength tunable infrared detector based upon super-schottky or

A monolithic integrated focal plane sensor array having elements sensitive to IR radiation and elements sensitive to mm-wave radiation. The sensor elements of the array sensitive to mm-wave have microantennas coupled to the sensors.

Monolithic integrated dual mode IR/mm-wave focal plane sensor

Apparatus for determining the composition of mercury-cadmium-telluride or other alloy semiconductors by using a four-photon mixing phenomenon. Means are provided for a pair of colinear laser beams of different optical frequencies such that the colinear beams passed through a sample of Hg.sub.1-x Cd.sub.x Te or other alloy semiconductors to produce emissions beams of the original incident optical frequencies and two or more additional optical frequencies formed by an electron spin-flip interaction. A magnetic field means is employed for varying a magnetic field across the sample during passage of the colinear beam from the points substantially below to substantially above the resonant field of the sample to produce a spin-flip signal which has a peak amplitude. Detector means are adapted to receive the emission beams to identify the spin-flip signal peak from which the spin-level splitting factor can be measured. Upon measurement of the spin-level splitting factor, the value for x can be calculated in Hg.sub.1-x Cd.sub.x Te or other alloy semiconductor.

Apparatus for determining the composition of mercury-cadmium-telluride

Disclosed are cascaded spin-flip Raman lasers involving alloy semiconductors such as mercury cadmium telluride with different energy gaps or with an energy gap gradient to provide for a relatively large change in frequency for a small change in field and enabling operation at low magnetic field levels where the output power and conversion efficiency are high.

Growing community of inventors

Edina, MN, United States of America

Paul W Kruse, Jr