University of California

Cree Gmbh

Japan Science and Technology Agency

Creeled, Inc.

Japan Science and Technology Center

Paul Thomas Fini

Steven P DenBaars

James Stephen Speck

Benjamin A Haskell

Shuji Nakamura

Troy J Baker

Michael D Craven

Ryan Gresback

Kenneth Lotito

Bernd P Keller

Ceri Griffiths

Shuji Nakamua

Shigemasa Matsuda

Eric J Tarsa

James Ibbetson

Theodore D Lowes

Ronald W Bessems

Kenneth Morgan Davis

Deborah Kircher

Erin Welch

A semiconductor light emitting device includes a light emitting diode (LED) chip, a recipient luminophoric medium on the LED chip, a patterned superstrate on the recipient luminophoric medium opposite the LED chip, the patterned superstrate comprising a patterned superstrate on the recipient luminophoric medium opposite the LED chip, the patterned superstrate comprising a patterned surface that is configured to reduce a variation in a color point of a light emitted by the semiconductor light emitting device as a function of an angle off an optical axis of the LED chip.

Semiconductor light emitting devices including superstrates with patterned surfaces

A stabilized quantum dot composite includes a plurality of luminescent semiconducting nanoparticles embedded in a matrix comprising an ionic metal oxide. A method of making a stabilized quantum dot composite includes forming a mixture comprising a plurality of luminescent semiconducting nanoparticles dispersed in an aqueous solution comprising an ionic metal oxide. The mixture is dried to form a stabilized quantum dot composite comprising the plurality of luminescent semiconducting nanoparticles embedded in a matrix comprising the ionic metal oxide.

Stabilized quantum dot composite and method of making a stabilized quantum dot composite

A lighting fixture has a communication interface; a light source configured to provide light output for general illumination; an image sensor configured to capture image information associated of with a field of view; and control circuitry, which is configured to provide a drive signal to the light source to control the light output. In one embodiment, the control circuitry is further configured to, for each object in the field of view, determine if an object in the field of view is an occupant based on the image information; if the object is an occupant, track movement of the occupant within the field of view; and determine a number of occupants in the field of view. The control circuitry may also be configured to provide occupancy information bearing on the number of occupants in the field of view to a remote entity via the communication interface.

Occupant tracking

A stabilized quantum dot structure for use in a light emitting diode (LED) comprises, according to one embodiment, a luminescent particle comprising one or more semiconductors, a buffer layer overlying the luminescent particle, where the buffer layer comprises an amorphous material, and a barrier layer overlying the buffer layer, where the barrier layer comprises oxygen, nitrogen and/or carbon. According to another embodiment, the stabilized quantum dot structure includes a luminescent particle comprising one or more semiconductors, and a treated buffer layer comprising amorphous silica overlying the luminescent particle, where the stabilized quantum dot structure exhibits a quantum yield of at least about 0.7 when exposed to a blue light flux of about 30 W/cmat a temperature of 80-85&#xb0; C. and relative humidity of 5% for 500 hours.

Stabilized quantum dot structure and method of making a stabilized quantum dot structure

Lighting components and fixtures having optical elements with multiple portions are disclosed. A wavelength conversion element can be mounted over a source, the wavelength conversion element including wavelength conversion material remote to the source, such as on or near the outside surface of a conversion element. The element can be filled with a transparent and thermally conductive material which thermally couples the remote conversion material and the source, aiding in thermal dissipation and improving fixture efficacy. An optical element can be formed by using an embossing plate to form a first portion, partially curing the first portion, removing the embossing plate, and introducing material to form a second portion.

Remote phosphor element filled with transparent material and method for forming multisection optical elements

A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {101} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {103} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {112} gallium nitride (GaN) grown on a {100} sapphire substrate, and (4) {103} gallium nitride (GaN) grown on a {100} sapphire substrate.

Technique for the growth of planar semi-polar gallium nitride

Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.

Growth of planar, non-polar, group-III nitride films

A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {101} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {103 } gallium nitride (GaN) grown on a {110} spinel substrate, (3) {112} gallium nitride (GaN) grown on a {100} sapphire substrate, and (4) {103} gallium nitride (GaN) grown on a {100} sapphire substrate.

Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.

Growth of reduced dislocation density non-polar gallium nitride

Highly planar non-polar GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.

Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy

Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.

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Santa Barbara, CA, United States of America

Paul Thomas Fini