Asm America, Inc.

Paul T Jacobson

Ivo Johannes Raaijmakers

Ravinder K Aggarwal

Robert C Haro

Keith Doran Weeks

Michael W Halpin

James S Roundy

James F Kusbel

Paul R Carr

Chantal Arena

Nyles Wynn Cody

Michael A Todd

Matthias Bauer

Pierre Tomasini

Paul D Brabant

Joseph P Italiano

Ronald T Bertram

Nilesh Rajbharti

Rod Lenz

A system and methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. The system is configured with an upper bank of heat elements perpendicular to the gas flow path, such that when the substrate is heated, the temperature across the substrate can be maintained relatively uniform via zoned heating. Advantageously, a short, low temperature process is suitable for advanced, high density circuits with shallow junctions. Furthermore, throughput is greatly improved by the low temperature bake.

System for rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow

Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow

A substrate processing system has computer controlled injectors. The computer is configured to adjust a plurality of injectors, such as during deposition of a graded layer, between depositions of two different layers, or between deposition and chamber clean steps.

System for control of gas injectors

Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.

Selective deposition of silicon-containing films

A substrate to be processed in a high temperature processing chamber is preheated to avoid the problems associated with thermal shock when the substrate is dropped onto a heated susceptor. Preheating is effected by holding the substrate over a susceptor maintained at or near the processing temperature until the temperature of the substrate approaches the processing temperature. Thus, wafer warping and breakage are greatly reduced, and wafer throughput is improved because of time saved in maintaining the susceptor at constant temperature without cool down and reheat periods.

High temperature drop-off of a substrate

A semiconductor processing apparatus having a processing chamber defined by a plurality of walls and a substrate support to support a substrate within the processing chamber.

Light scattering process chamber walls

The invention is a carrier comprising three support elements connected by an underlying frame. The periphery of a wafer rests upon the support elements. The invention also comprises a wafer handler with a plurality of arms. Spacers space the carrier above a base plate associated with a station in a wafer handling area. An arm slides beneath the frame and between the spacers, but the handler does not contact the wafer. A method of using the handler and carrier is provided where the handler lifts and rotates the carrier with the wafer through various stations in a wafer handling area. A control device reduces the handler speed only at critical points of the processing cycle. The handler is capable of moving a plurality of carriers and wafers simultaneously.

Method for handling of wafers with minimal contact

The invention is a carrier comprising three support elements connected by an underlying frame. The periphery of a wafer rests upon the support elements. The invention also comprises a wafer handler with a plurality of arms. Spacers space the carrier above a base plate associated with a station in a wafer handling area. An arm slides beneath the frame and between the spacers, but the handler does not contact the wafer. A method of using the handler and carrier is provided where the handler lifts and rotates the carrier with the wafer through various stations in a wafer handling area. The handler is capable of moving a plurality of carriers and wafers simultaneously.

Wafer carrier and method for handling of wafers with minimal contact

Growing community of inventors

Phoenix, AZ, United States of America

Paul T Jacobson