Micron Technology Incorporated

Micron Semiconductor, Inc.

Other

Paul S Zagar

Adrian E Ong

Troy A Manning

Mirmajid Seyyedy

Todd A Merritt

Brent Keeth

Adrian H Ong

Brett L Williams

Kirk D Prall

Kurt P Douglas

Tod S Stone

Stephen L Casper

George B Raad

Ken Waller

Varadarajan L Narasimhan

Scott E Schaefer

Brian M Shirley

Ward D Parkinson

William K Waller

Loren L McLaury

Mark A Hawes

Michael W Starkweather

Brett L Wiliams

A configuration for a laser fuse bank is disclosed wherein the available space is more efficiently used. Fuses of graduated width and variable configuration are placed so as to minimize the average distance between fuses and maximize fuse density. Alternatively, a common source is added to a standard laser fuse structure such that it intersects the fuses and the number of available fuses is doubled.

Reduced pitch laser redundancy fuse bank structure

The invention is a dynamic random access memory (DRAM) device having an electronic test key fabricated on board and is a method for testing the DRAM. The electronic test key generates a signal which effects a variation in a period of an internal control signal to stress the DRAM during a test mode.

Circuit and method for varying a period of an internal control signal during a test mode

In an integrated circuit having addressable primary elements and redundant elements which can be programmed to replace primary elements, a circuit and method are provided for cancelling and replacing redundant elements. A circuit is described which can be used in a memory such as a dynamic random access memory (DRAM) which uses a selectively blowable anti-fuse to disable a redundant element which was previously programmed to replace a defective primary element. The disclosure describes a method for permanently cancelling the defective redundant element and replacing the defective redundant element with another redundant element.

Circuit for cancelling and replacing redundant elements

A dynamic memory is described which uses a multiplexed latch architecture and global bit lines. The multiplexed architecture allows the memory to operate as a synchronous pipelined cache memory in a computer processing system. The global bit lines are fabricated parallel to memory array bit lines and data input/output connections are distributed around the memory to increase speed. Multiplexed latch circuitry is provided which incorporates separate data paths for both data read and write operations.

Cache memories using DRAM cells with high-speed data path

A row repair system for replacing a defective primary memory row with a redundant memory row within an entire section of an integrated circuit memory chip. The system comprises a dedicated match circuit for each redundant row in a given section. The match circuit analyzes incoming address information to determine whether the address corresponds to a memory location in a specific defective row in any one of a number of sub-array blocks within the section. When such a critical address is detected, the match circuit activates circuitry which inhibits access to the defective row and enables access to its dedicated redundant row.

High speed global row redundancy system

An integrated circuit memory device has multiple subarray partitions which can be independently isolated from the remaining circuitry on the integrated circuit. Subarrays of the integrated circuit can be independently tested. Should a subarray of the integrated circuit be found inoperable it is electrically isolated from the remaining circuitry on the integrated circuit so that it cannot interfere with the normal operation of the remaining circuitry. Defects such as power to ground shorts in a subarray which would have previously been catastrophic can be electrically isolated allowing the remaining functional subarrays to be utilized. Integrated circuit repair by isolation of inoperative elements eliminates the current draw and other performance degradations that have previously been associated with integrated circuits with defects repaired through the incorporation of redundant elements alone.

Efficient method for obtaining usable parts from a partially good memory

A dynamic memory is described which uses a multiplexed latch architecture and global bit lines. The multiplexed architecture allows the memory to operate as a synchronous pipelined cache memory in a computer processing system. The global bit lines are fabricated parallel to memory array bit lines and input/output connections are distributed around the memory to increase speed. Page access operations are controlled to allow either single or burst writes.

DRAM cache

A semiconductor dynamic random-access memory (DRAM) device embodying numerous features that collectively and/or individually prove beneficial and advantageous with regard to such considerations as density, power consumption, speed, and redundancyis disclosed. The device is a 64 Mbit DRAM comprising eight substantially identical 8 Mbit partial array blocks (PABs), each pair of PABs comprising a 16 Mbit quadrant of the device. Between the top two quadrants and between the bottom two quadrants are column blocks containing I/O read/write circuitry, column redundancy fuses, and column decode circuitry. Column select lines originate from the column blocks and extend right and left across the width of each quadrant. Each PAB comprises eight substantially identical 1Mbit sub-array blocks (SABs). Associated with each SAB are a plurality of local row decoder circuits functioning to receive partially decoded row addresses from a column predecoder circuit and generating local row addresses supplied to the SAB with which they are associated. A hierarchical data path is provided wherein a plurality of multiplexers are distributed throughout each SAB, these multiplexers functioning to selectively couple sense amplifier output signals to local data I/O lines associated with each SAB. In one embodiment, the data path multiplexers are physically disposed within gaps defined by adjacent ones of the local row address decoders distributed throughout each SAB.

Dynamic random-access memory having a hierarchical data path

Circuit and method for varying a period of an internal control signal

Synchronous DRAM cache using write signal to determine single or burst

Data path for high speed high bandwidth DRAM

A semiconductor dynamic random-access memory (DRAM) device embodying numerous features that collectively and/or individually prove beneficial and advantageous with regard to such considerations as density, power consumption, speed, and redundancy is disclosed. The device is a 64 Mbit DRAM comprising eight substantially identical 8 Mbit partial array blocks (PABs), each pair of PABs comprising a 16 Mbit quadrant of the device. Between the top two quadrants and between the bottom two quadrants are column blocks containing I/O read/write circuitry, column redundancy fuses, and column decode circuitry. Column select lines originate from the column blocks and extend right and left across the width of each quadrant. Each PAB comprises eight substantially identical 1 Mbit sub-array blocks (SABs). Associated with each SAB are a plurality of local row decoder circuits functioning to receive partially decoded row addresses from a column predecoder circuit and generating local row addresses supplied to the SAB with which they are associated. Various pre- and/or post-packaging options are provided for enabling a large degree of versatility, redundancy, and economy of design. Programmable options of the disclosed device are programmable by means of both laser fuses and electrical fuses. In the RAS chain, circuitry is provided for simulating the RC time constant behavior of word lines and digit lines during memory accesses, such that memory access cycle time can be optimized. Test data compression circuitry optimizes the process of testing each cell in the array. On-chip topology circuitry simplifies the testing of the device.

Dynamic random access memory having decoding circuitry for partial

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Boise, ID, United States of America

Paul S Zagar