International Business Machines Corporation

Other

Paul S Ho

James K Howard

Robert J Miller

Gary W Rubloff

Amitava Gangulee

Peter O Hahn

Kie Y Ahn

Christopher H Bajorek

Kris V Srikrishnan

Arnold Reisman

Joachim Gerhard Clabes

Michael J Sullivan

James R Lloyd

Haralambos Lefakis

James M Oberschmidt

John V Powers

Tung-Sheng Kuan

Jasvir Singh Jaspal

Iwao Ohdomari

Uwe Koster

Devandra Gupta

David P Fouts

Harry Lefakis

A word processor using a standard United States keyboard which enables desired Chinese characters to be displayed by virtue of a phonetic selection of the consonant and vowel of the words represented by the various characters by the actuation of the letter keys of the keyboard; and by virtue of the selection of the first and last calligraphic strokes of the respective characters by actuation of the symbol keys on the standard keyboard which simulate the shape of such strokes.

Phonetic multi-lingual word processor

A technique is described for improving metal-organic substrate adhesion and for reducing stress between the metal film and the substrate. Low energy reactive ions, electrons, or photons are incident upon the substrate to alter the surface chemistry of the substrate to a depth of from about 10 angstroms to a few hundred angstroms. The energy of the incident reactive ions and electrons is about 50-2000 eV, while the energy of the incident photons is about 0.2-500 eV. Irradiation of the substrate can occur prior to or during metal deposition. For simultaneous metal deposition/particle irradiation, the arrival rates of the metal atoms and the substrate treatment particles are within a few order of magnitude of one another. Room temperatures or elevated temperatures are suitable.

Metal-polymer adhesion by low energy bombardment

A technique is described for increasing the adhesion between metals and organic substrates, where the metals are those which normally only very weakly bond to the substrate. These metals include Ni, Cu, Al, Ag, Au, Ta, Pt, Ir, Rh, Pd, Zn, and Cd. The organic substrates include mylar, polyimides, polyesters, polyethylene, polystyrene, etc. Enhanced adhesion occurs when intermixing between the depositing metal atoms and the substrate is optimized to a depth less than about 1000 angstroms into the substrate. This occurs in a critical substrate temperature range of about (0.6-0.8) T.sub.c, where T.sub.c is the curing temperature of the substrate. The deposition rate of the metal atoms is chosen such that the arrival rate of the metal atoms at the surface of the substrate is comparable to or less than the rate of diffusion of metal atoms into the substrate. This provides optimum intermixing and maximum adhesion.

Enhanced adhesion between metals and polymers

Electromigration activity is decreased and lifetime is extended in solder stripes employed as conductors and terminals on microelectronic devices by forming an alloy of a solute element, such as copper, with tin in a lead/tin solder and providing a substantially uniform distribution of particles of the intermetallic compound in the solder. The concentration of the solute element is maintained at less than about three times the tin concentration and less than about 10% of the amount of the solder.

Electromigration lifetime increase of lead base alloys

A word processor using a standard United States keyboard is provided which enables appropriate Chinese, Japanese, or other characters, to be selected phonetically and recorded for subsequent print-out. The letters on the standard keyboard are actuated to display characters corresponding to the Chinese words or syllables, each of which generally includes a consonant and a vowel. The keys of the keyboard are marked on top with letters corresponding phonetically with the consonant portions of the Japanese, Chinese or other words. The consonants are phonetically selected by the phonetic standard American letters on the keyboard, since the correspondence between the Chinese or Japanese consonants and the English letters are generally understood by Chinese and Japanese people. The keys on the keyboard are also marked, on the front sides, with characters and letters corresponding phonetically to the vowel portions of the Chinese or Japanese words. For each word, the first key operated constitutes a phonetic selection of the consonant of a desired word, and the second key operated constitutes a phonetic selection the vowel of the desired word. The result for most selected words, unless the exact vowel tone is selected, is that a number of different characters corresponding phonetically to the selected words, and variants, are displayed, and the operator then selects the proper character corresponding to the correct word, and causes only the proper character to be transferred to the text portion of the display screen. When the tone of the desired is known further keys may be operated which serve to reduce the number of variance displayed. The process is repeated until a complete page of selected correct characters appear on the text portion of the screen, and at that time the page is transferred to a floppy disc memory for subsequent print out. The word processor of the invention can also be adapted to other languages, such as Russian, Arabic, Korean, etc.

Phonetic multilingual word processor

A laminated conductor includes a lower thin film of nickel deposited upon a substrate containing silicon. Upon the film of nickel, a thicker film of gold is deposited as the conductive portion of the conductor. On the upper surface of the gold layer is deposited a thin film of nickel. Failure of the conductor because of electromigration is reduced dramatically as compared with use of molybdenum instead of nickel in the laminated structure.

Nickel-gold-nickel conductors for solid state devices

Methods and resulting structures for thermally stable metal/silicon contacts are described. The resulting contacts are aluminum which is alloyed with at least one noble metal from the group of Pd and Pt wherein at least one region of the contact is further alloyed with silicon.

Metal/silicon contact and methods of fabrication thereof

A laminated conductor includes a lower thin film of nickel-X alloy or pseudo alloy deposited upon a substrate containing silicon or upon a substrate intended for use as a magnetic bubble storage device. Upon the film of nickel-X alloy, a thicker film of gold is deposited as the conductive portion of the conductor. On the upper surface of the gold layer is deposited a thin film of nickel-X alloy. Failure of the conductor because of electromigration is reduced dramatically as compared with use of molybdenum instead of nickel in the laminated structure. The nonmagnetic nickel-X alloy does not interfere with magnetic fields or produce unwanted magnetic fields.

Nickel-X/gold/nickel-X conductors for solid state devices where X is

A method and resulting structure for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, and magnetic bubble structures, is set forth. The conductive stripe includes gold with at least one transition metal from the group niobium, zirconium and hafnium. The gold and at least one transition metal are deposited onto a supporting body. The deposited metallic material is then annealed at a temperature between about 200.degree. C. and 500.degree. C. for a time sufficient to form a gold-transition metal compound within a gold matrix. The conductive stripes are formed by masking and removing portions of the annealed metallic material to produce conductive stripes which may have a width of 6.times.10.sup.-4 inches or less. These stripes have significantly improved electromigration performance and do not have significantly increased resistance.

Electromigration resistance in gold thin film conductors

A method for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, magnetic bubbles structures, etc. The conductive stripe includes aluminum or aluminum copper with at least one transition metal. The aluminum and at least one transition metal are deposited onto a supporting body at a very low pressure in a substantially oxygen-free high vacuum. The composite is then annealed at a temperature between about 200.degree. C. and 525.degree. C. for a time sufficient to form an aluminum and transition metal compound within the aluminum. The conductive stripes are then formed by masking and removing portions of the annealed metallic material. The resulting conductive stripes, which may be of a width of about 6.times.10.sup.-4 inches or less, have a significantly improved electromigration performance without significantly increasing resistance in the conductive stripe.

Method for forming intermetallic layers in thin films for improved

A method and resulting structure for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, magnetic bubbles structures, etc. The conductive stripe includes aluminum or aluminum copper with at least one transition metal. The aluminum and at least one transition metal are deposited onto a supporting body at a very low pressure in a substantially oxygen-free high vacuum. The composite is then annealed at a temperature between about 200.degree. C and 525.degree. C for a time sufficient to form an aluminum and transition metal compound within the aluminum. The conductive stripes are then formed by masking and removing portions of the annealed metallic material. The resulting conductive stripes, which may be of a width of about 6.times.10.sup.-.sup.4 inches or less, have a significantly improved electromigration performance without significantly increasing resistance in the conductive stripe.

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Chappaqua, NY, United States of America

Paul S Ho