Praxair S.t. Technology, Inc.

Alliedsignal Inc.

Sony Corporation

Materials Research Corporation

Inco Alloys International, Inc.

Praxair Technology, Inc.

Paul S Gilman

Thomas J Hunt

Michael S Zedalis

Andrew C Perry

Holger J Koenigsmann

Santosh K Das

Chi-Fung Lo

Stephen J Donachie

Darryl Draper

David P Strauss

Jaydeep Sarkar

Wendell R Stuber

Binu Mathew

Walter E Mattson

Arun D Jatkar

Raymond K Lam

Suresh Annavarapu

Peter McDonald

Jaak Van Den Sype

James Elliot Joyce

Ernesto Aviles

Brian J O'Hara

Derek Raybould

Raymond C Benn

Hidemasa Tamura

Norio Yokoyama

Robert D Schelleng

Alfred Snowman

Donald H Osborn

Winfred L Woodard, Iii

Ivan Ward

Shailesh Kulkarni

Hung-Lee Hoo

Eiichi Shimizu

Winfred L Woodward, Iii

Andre Desert

Anthony Testa

Neil J Sullivan

Howard H Levine

Jean Pierre Blanchet

Tetsuya Kojima

Sontosh K Das

Brian J O'HARA

A unique sequence of steps is provided to reduce contaminants along one or more surfaces and faces of gold evaporative sources without deleteriously impacting the structure of the gold evaporative sources. Edges are deburred; contaminants are successfully removed therealong; and surface smoothness is substantially retained. The resultant gold evaporative source is suitable for use in evaporative processes as a precursor to gold film deposition without the occurrence or a substantial reduction in the likelihood of spitting by virtue of significantly reduced levels of contaminants, in comparison to gold evaporative sources subject to a standard cleaning protocol.

Gold evaporative sources with reduced contaminants and methods for making the same

The present invention relates to novel and improved high purity diffusion bonded copper (Cu) sputtering targets having a Cu purity level of 99.9999% (6N) or greater. The target assemblies of the present invention exhibit sufficient bond strength and microstructural homogeneity, both of which are properties previously considered mutually exclusive for conventional 6N Cu target assemblies. The grain structure is characterized by an absence of alloying elements and the bonded interface is generally flat without any type of interlayer or interlocking arrangement.

Diffusion bonded high purity copper sputtering target assemblies

The present invention relates to a method and apparatus of forming a sputter target assembly having a controlled solder thickness. In particular, the method includes the introduction of a bonding foil, between the backing plate and the sputter target, wherein the bonding foil is an ignitable heterogeneous stratified structure for the propagation of an exothermic reaction.

Method for forming sputter target assemblies having a controlled solder thickness

The method forms a sputter target assembly by attaching a sputter target to an insert and applying a bond metal layer between the insert and a backing plate. Then pressing the insert and backing plate together forms a solid state bond with the bond metal layer, attaches the insert to the backing plate and forms at least one cooling channel between the insert and the backing plate.

Method for forming sputter target assemblies

A physical vapor deposition target for the manufacturing of flat panel displays is provided. The target includes a ternary alloy system having, by atom percent, a first component in an amount of about 90 to 99.98, wherein the first component is aluminum, a second component in an amount of about 0.01 to 2.0, wherein the second component is a rare earth element selected from the group consisting of Nd, Ce, Dy and Gd, and a third component in an amount of about 0.01 to 8.0, wherein the third element is selected from the group consisting of Ni, Co, Mo, Sc, and Hf.

Ternary aluminum alloy films and targets for manufacturing flat panel displays

The sputter target has a composition selected from the group consisting of high-purity copper and copper-base alloys. The sputter target's grain structure is at least about 99 percent recrystallized; and the sputter target's face has a grain orientation ratio of at least about 10 percent each of (111), (200), (220) and (311). In addition, the sputter target has a grain size of less than about 10 &#x3bc;m for improving sputter uniformity and reducing sputter target arcing.

Ultrafine-grain-copper-base sputter targets

A precious metal sputter target has a composition selected from the group consisting of platinum, palladium, rhodium, iridium, ruthenium, osmium and single-phase alloys thereof. The sputter target's grain structure is at least about 99 percent recrystallized and has a grain size of less than about 200 &#x3bc;m for improving sputter uniformity. The cryogenic method for producing these sputter targets is also effective for improving sputter performance for silver an gold sputter targets.

Controlled-grain-precious metal sputter targets

The high-purity aluminum sputter target is at least 99.999 weight percent aluminum and has a grain structure. The grain structure is at least 99 percent recrystallized and has a grain size of less than 200 &#x3bc;m. The method forms high-purity aluminum sputter targets by first cooling a high-purity target blank to a temperature of less than &#x2212;50 &#xb0; C. and then deforming the cooled high-purity target blank introduces intense strain into the high-purity target. After deforming, recrystallizing the grains at a temperature below 200 &#xb0; C. forms a target blank having at least 99 percent recrystallized grains. Finally, finishing at a low temperature sufficient to maintain the fine grain size of the high-purity target blank forms a finished sputter target.

High-purity aluminum sputter targets and method of manufacture

A precious metal sputter target has a composition selected from the group consisting of platinum, palladium, rhodium, iridium, ruthenium, osmium and single-phase alloys thereof. The sputter target's grain structure is at least about 99 percent recrystallized and has a grain size of less than about 200 &#x3bc;m for improving sputter uniformity. The cryogenic method for producing these sputter targets is also effective for improving sputter performance for silver and gold sputter targets.

The sputter target includes a tantalum body having tantalum grains formed from consolidating tantalum powder and a sputter face. The sputter face has an atom transport direction for transporting tantalum atoms away from the sputter face for coating a substrate. The tantalum grains have at least a 40 percent () direction orientation ratio and less than a 15 percent () direction orientation ratio in an atom transport direction away from the sputter face for increasing sputtering uniformity, the tantalum body being free of ()&#x2013;() direction banding detectable by Electron Back-Scattering Diffraction and wherein the sputter target has a purity of at least 99.99 (%) percent.

Textured-grain-powder metallurgy tantalum sputter target

Provided is a method of forming ferromagnetic sputter targets and sputter target assemblies having a uniform distribution of magnetic leakage flux. The method includes providing a ferromagnetic sputter workpiece and hot rolling the workpiece to a substantially circular configuration sputter target; machining a taper in a surface of the sputter target to have a thickness gradient of the sputter target, where the center of the sputter target is about 0.020 to about 0.005 inches thinner than the edge of the sputter target, and where the magnetic leakage flux across the sputter target is uniformly distributed.

High purity ferromagnetic sputter target, assembly and method of manufacturing same

An aluminum alloy sputter target having a sputter target face for sputtering the sputter target is disclosed. The sputter target face has a textured-metastable grain structure. The textured-metastable grain structure has a grain orientation ratio of at least 35 percent (200) orientation. The textured-metastable grain structure is stable during sputtering of the sputter target. The textured-metastable grain structure has a grain size of less than 5 &#x3bc;m. The method forms aluminum alloy sputter targets by first cooling an aluminum alloy target blank to a temperature of less than &#x2212;50&#xb0; C. Then deforming the cooled aluminum alloy target blank introduces plastic strain into the target blank and reduces the grain size of the grains to form a textured-metastable grain structure. Finally, finishing the aluminum alloy target blank forms a finished sputter target that maintains the textured-metastable grain structure of the finished sputter target.

Textured-metastable aluminum alloy sputter targets and method of manufacture

The sputter target has a composition selected from the group consisting of high-purity copper and copper-base alloys. The sputter target's grain structure is at least about 99 percent recrystallized; and the sputter target's face has a grain orientation ratio of at least about 10 percent each of (), (), () and (). In addition, the sputter target has a grain size of less than about 10 &#x3bc;m for improving sputter uniformity and reducing sputter target arcing.

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Suffern, NY, United States of America

Paul S Gilman