Motorola Corporation

Other

Paul Robert Claisse

Wenbin Jiang

Philip Anthony Kiely

Jamal Ramdani

Michael S Lebby

Craig A Gaw

Benjamin W Gable

Chang-Long Shieh

A Vertical Cavity Surface Emitting Laser (VCSEL) ( ) and a method for manufacturing the VCSEL ( ). The VCSEL ( ) includes a ridge structure ( ), a first confinement layer ( ) disposed adjacent to a portion of the ridge structure ( ), and a second confinement layer ( ) disposed on the first confinement layer ( ) and disposed adjacent to a portion of the ridge structure ( ). Carriers injected into the ridge structure ( ) are confined by the first confinement layer ( ).

Semiconductor laser device and method of manufacture

A vertical cavity surface emitting laser (,) and a diode (,) is provided. The diode (,) is electrically coupled in reverse parallel to the vertical cavity surface emitting laser (,), thereby providing a portion of protection against electro-static discharge damage to the vertical cavity surface emitting laser (,).

Semiconductor laser having electro-static discharge protection

A Vertical Cavity Surface Emitting Laser (VCSEL) (10) and a method for manufacturing the VCSEL (10). The VCSEL (10) includes a ridge structure (34), a first confinement layer (36) disposed adjacent to a portion of the ridge structure (34), and a second confinement layer (37) disposed on the first confinement layer (36) and disposed adjacent to a portion of the ridge structure (32). Carriers injected into the ridge structure (34) are confined by the first confinement layer (36).

Automatic power control of a semiconductor laser (12, 72) is achieved by monitoring the spontaneous lateral emissions from the semiconductor laser and adjusting the drive signal to the laser based on the detected emissions. A lateral detector (13, 73) generates a photocurrent from the spontaneous emissions. The detector signal (Ilat) is compared to a reference signal (Iref) and the difference is applied to the drive signal (Ilas) to alter or control the laser output. The magnitudes of the reference signal source and the drive signal source are determined and set based on the desired optical output power of the semiconductor laser measured at a series of temperatures.

Automatic power control of semiconductor laser

An array of annular waveguide VCSELs for achieving a stable single high order mode light source characterized as emitting a plurality of emission beams of varying wavelengths. The device array including a first mirror stack with mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system lattice matched to an active region. The active region includes an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure having at least one quantum well. The VCSEL further includes a second mirror stack lattice matched to the second cladding region and having mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system. The second mirror stack is etched to define a first VCSEL and at least one additional VCSEL, each VCSEL including an etched region, thereby defining an annular emission region through which light generated by the annular waveguide VCSEL is emitted.

Annular waveguide vertical cavity surface emitting laser array and

A vertical cavity surface emitting laser array with an integrated PIN photodiode. The PIN photodiode includes a first region of a first doped material, a second region of an undoped material and a third region composed of an n-doped stack of distributed Bragg reflectors. The vertical cavity surface emitting laser includes the n-type stack of distributed Bragg reflectors, an active, and a p-type stack of distributed Bragg reflectors so as to define an optical pathway through which light is generated and passes. The integrated device allows for automatic power control of each of the individual devices forming the array by sequentially scanning the individual devices and generating feedback signals.

Vertical cavity surface emitting laser array with integrated

A method for biasing a semiconductor laser (12) at the threshold level of the semiconductor laser (12). The method includes applying pilot tone signals having the same frequency to a bias current and a drive current of the semiconductor laser (12). A lateral detector (13) generates a photocurrent from spontaneous emissions of the semiconductor laser (12). Further, the method includes biasing the semiconductor laser (12) using a pilot tone signal of the photocurrent.

Method for biasing semiconductor lasers

An annular waveguide VCSEL for achieving a stable high power single high order mode output including a first mirror stack with mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system lattice matched to an active region. The active region includes an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure having at least one quantum well. The VCSEL further includes a second mirror stack lattice matched to the second cladding region and having mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system. The second mirror stack including an etched region, thereby defining an annular emission region through which light generated by the annular waveguide VCSEL is emitted.

Annular waveguide vertical cavity surface emitting laser and method of

A vertical cavity surface emitting laser (VCSEL) with an integrated phase shift mask for use in an optical pickup head for high density optical storage applications and a method of fabrication. The VCSEL is capable of emitting a power output of at least 10 mW. The phase shift mask is integrated with the VCSEL to allow for a 180.degree. shift in light emitted therethrough, thereby creating a reduced focal spot size for high density data write applications. The VCSEL with integrated phase shift mask is utilized in an optical pickup head capable of high density read and write applications for both CDs and DVDs.

Vertical cavity surface emitting laser with phase shift mask

A VCSEL for emitting long wavelength light including a GaAs substrate element, a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaInAsN active region with an active structure sandwiched between a first cladding region adjacent the first mirror stack, and a second cladding region. The first and second cladding regions including an InGaP/GaAs material system. The active structure includes a nitride based quantum well and either a GaAsP or a GaAs barrier layer. A second mirror stack is lattice matched to the second cladding region and has mirror pairs in a GaAs/AlGaAs material system.

Long wavelength vertical cavity surface emitting laser

A first stack (112) of distributed Bragg reflectors, a first cladding region (114) disposed on the first stack of distributed Bragg reflectors (112) and including a defect inhibition layer (117) an active area (122) disposed on the first cladding region (114), a second cladding region (132) disposed on the active area (122) and including a defective inhibition layer (136), and a second stack (140) of distributed Bragg reflectors disposed on the second cladding region (132). The defect inhibition layers (117, 136) substantially prevent defects in the active area (122).

Light emitting device having a defect inhibition layer

An integrated vertical cavity surface emitting laser (VCSEL) pair for use in an optical pickup head for high density optical storage applications and a method of fabrication. The VCSEL pair includes a high power VCSEL capable of emitting a power output of at least 15 mW and a low power VCSEL capable of emitting a power output in a range of 1-4 mW. A phase shift mask is integrated with the high power VCSEL to allow for a 180.degree. shift in light emitted therethrough, thereby creating a reduced focal spot size for high density data write applications. The low power VCSEL emission is focused into a Gaussian beam profile for data read applications. The integrated VCSEL pair is utilized in an optical pickup head capable of high density read and write applications for both CDs and DVDs.

Integrated vertical cavity surface emitting laser pair for high density

A near IR VCSEL including a mirror stack positioned on a substrate, formed of a plurality of pairs of relatively high and low index of refraction layers a second mirror stack formed of a plurality of pairs of relatively high and low index of refraction layers, an active region sandwiched between the first stack and the second stack, the active region being formed of active layers of GaInAsP having barrier layers of GaAlAs sandwiched therebetween.

Reliable near IR VCSEL

A method of biasing a semiconductor laser to a threshold level including the step of providing a semiconductor laser, monitoring spontaneous emissions of the semiconductor laser, identifying a point at which the spontaneous emissions clamp, and employing feedback to maintain a threshold level, driven by the identification of the point at which the spontaneous emissions clamp.

Integrated lateral detector and laser device and method of fabrication

A passivated vertical cavity surface emitting laser including a first stack of distributed Bragg reflectors disposed on the surface of a semiconductor substrate, a first cladding region disposed on the first stack, an active region disposed on the first cladding region, a second cladding region disposed on the active region, and a second stack of distributed Bragg reflectors disposed on the second cladding region. A passivation layer having an optical thickness of an integral multiple of approximately one half of the wavelength of emitted light is disposed on the vertical cavity surface emitting laser.

Growing community of inventors

Gilbert, AZ, United States of America

Paul Robert Claisse