Freescale Semiconductor,inc.

Nxp USA, Inc.

Paul Richard Hart

Joseph Staudinger

Abdulrhman M S Ahmed

Mario M Bokatius

Richard Emil Sweeney

Lakshminarayan Viswanathan

Margaret A Szymanowski

Mahesh K Shah

Lu Li

Shun Meen Kuo

Ramanujam Shinidhi Embar

Jeffrey Kevin Jones

Jaynal Abedin Molla

Lionel Mongin

David F Abdo

Pierre Marie Jean Piel

Geoffrey Tucker

Monte Gene Miller

Justin Eugene Poarch

Carl Emil D'Acosta

Nicholas J Spence

John J Vaglica

Ramanujam Srinidhi Embar

Michael E Watts

Justin Nelson Annes

Pierre-Marie J Piel

Abdulrhman Ms Ahmed

Richard E Sweeney

Abdulrhman Ahmed

Example systems have a defrost system that can receive a first RF signal at a first frequency to defrost a load. An air treatment device can receive a second RF signal at a second frequency and perform an air treatment process. An RF signal source has a power output, and a switching arrangement selectively electrically connects the defrost system and the first air treatment device to the power output of the RF signal source. A controller can electrically connect one of the defrost system and the first air treatment device to the power output of the RF signal source. When the defrost system is electrically connected, the RF signal source outputs the first RF signal at the first frequency, and when the first air treatment device is electrically connected, the RF signal source outputs the second RF signal at the second frequency.

Multifunctional radio frequency systems and methods for UV sterilization, air purification, and defrost operations

Microelectronic systems and components having integrated heat dissipation posts are disclosed, as are methods for fabricating such microelectronic systems and components. In various embodiments, the microelectronic system includes a substrate having a frontside, a socket cavity, and inner cavity sidewalls defining the socket cavity. A microelectronic component is seated on the frontside of the substrate such that a heat dissipation post, which projects from the microelectronic component, is received in the socket cavity and separated from the inner cavity sidewalls by a peripheral clearance. The microelectronic system further includes a bond layer contacting the inner cavity sidewalls, contacting an outer peripheral portion of the heat dissipation post, and at least partially filling the peripheral clearance.

Microelectronic components having integrated heat dissipation posts and systems including the same

A packaged microelectronic component includes a substrate and a semiconductor die coupled to a top surface of the substrate. A method of attaching the packaged microelectronic component to a secondary structure entails applying a metal particle-containing material to at least one of a bottom surface of the substrate and a mounting surface of the secondary structure. The packaged microelectronic component and the secondary structure are arranged in a stacked relationship with the metal particle-containing material disposed between the bottom surface and the mounting surface. A low temperature sintering process is performed at a maximum process temperature less than a melt point of the metal particles to transform the metal particle-containing material into a sintered bond layer joining the packaged microelectronic component and the secondary structure. In an embodiment, the substrate may be a heat sink for the packaged microelectronic component and the secondary structure may be a printed circuit board.

Packaged microelectronic component mounting using sinter attachment

Embodiments of circuits for use with an amplifier that includes multiple amplifier paths include a first circuit and a second circuit in parallel with the first circuit. The first circuit includes a first input coupled to a first power divider output, a first output coupled to a first amplifier path of the multiple amplifier paths, and a first adjustable phase shifter and a first attenuator series coupled between the first input and the first output. The second circuit includes a second input coupled to a second power divider output, a second output coupled to a second amplifier path of the multiple amplifier paths, and a second adjustable phase shifter coupled between the second input and the second output.

Phase shift and attenuation circuits for use with multiple-path amplifiers

Microelectronic systems having integrated heat dissipation posts are disclosed, as are methods for fabricating such microelectronic systems. In various embodiments, the method includes the step or process of obtaining a microelectronic component from which a heat dissipation post projects. The microelectronic component is placed or seated on a substrate, such as a multilayer printed circuit board, having a socket cavity therein. The heat dissipation post is received in the socket cavity as the microelectronic component is seated on the substrate. Concurrent with or after seating the microelectronic component, the microelectronic component and the heat dissipation post are bonded to the substrate. In certain embodiments, the heat dissipation post may be dimensioned or sized such that, when the microelectronic component is seated on the substrate, the heat dissipation post occupies a volumetric majority of the socket cavity.

Microelectronic components having integrated heat dissipation posts, systems including the same, and methods for the fabrication thereof

A device (e.g., a Doherty amplifier) housed in an air cavity package includes one or more isolation structures over a surface of a substrate and defining an active circuit area. The device also includes first and second adjacent circuits within the active circuit area, first and second leads coupled to the isolation structure(s) between opposite sides of the package and electrically coupled to the first circuit, third and fourth leads coupled to the isolation structure(s) between the opposite sides of the package and electrically coupled to the second circuit, a first terminal over the first side of the package between the first lead and the third lead, a second terminal over the second side of the package between the second lead and the fourth lead, and an electronic component coupled to the package and electrically coupled to the first terminal, the second terminal, or both the first and second terminals.

Semiconductor packages having wire bond wall to reduce coupling

An embodiment of an amplifier system includes a modifiable signal adjustment device with an RF signal adjustment circuit coupled between first and second nodes. The RF signal adjustment circuit includes an adjustable phase shifter and an adjustable attenuator coupled in series with each other. The device also includes a memory and a controller circuit. The controller circuit retrieves a phase shift value and an attenuation value from the memory. The controller circuit then controls the adjustable phase shifter to apply a phase shift corresponding to the phase shift value to an input RF signal received at the first node, and controls the adjustable attenuator to apply an attenuation corresponding to the attenuation value to the input RF signal. Applying the phase shift and the attenuation results in an output RF signal at the second node.

Modifiable signal adjustment devices for power amplifiers and corresponding methods and apparatus

Growing community of inventors

Phoenix, AZ, United States of America

Paul Richard Hart