Taiwan Semiconductor Manufacturing Comp. Ltd.

Paul Ranucci

Alan S Roth

Eric Soenen

Stefan Rusu

Nick Samra

Tze-Chiang Huang

Ying-Chih Hsu

Mei Hsu Wong

Haohua Zhou

Devices and methods are described herein for a pulse amplitude modulation (PAM) driver. In one embodiment, the PAM driver includes a first high-speed buffer configured to output a first voltage, a second high-speed buffer configured to output a second voltage, and a plurality of transistors coupled to the first high-speed buffer and the second high-speed buffer. At least one of the first voltage or the second voltage facilitates selective operation of a transistor of the plurality of transistors to output a third voltage.

Semiconductor device including a pulse amplitude modulation driver

A semiconductor structure includes a first substrate. A first die and a second die are disposed over the first substrate and are adjacent to one another. A plurality of first conductive bumps are disposed between the first substrate and the first die and between the first substrate and the second die. A second substrate is disposed below the first substrate. A plurality of second conductive bumps is disposed between the first substrate and the second substrate. An in-package voltage regulator (PVR) chip is disposed over the second substrate. A molding material is disposed over the first substrate and surrounds the first die, the second die, the plurality of first conductive bumps, the plurality of second conductive bumps, and the PVR chip.

Power delivery for multi-chip-package using in-package voltage regulator

Various magnetic thin film inductor structures are disclosed that include one or more magnetic thin film (MTF) materials. During operation, an electric field passes through one or mare conductive windings which, in turn, generates a magnetic field for storing energy within these magnetic thin film inductor structures. The magnetic thin film (MTF) materials within these magnetic thin film inductor structures effectively attract magnetic flux lines of this magnetic field. As a result, any magnetic leakage resulting from the magnetic field generated by these magnetic thin film inductor structures onto nearby electrical, mechanical, and/or electro-mechanical devices is lessened when compared to magnetic leakage resulting from the magnetic field generated by other inductor structures not having the one or more MTF materials.

Magnetic thin film inductor structures

A device includes a semiconductor die. The semiconductor die has formed thereon a plurality of multi-phase voltage regulator modules of the same design formed on a common semiconductor substrate.

Modular voltage regulators

A current sensor circuit is provided. The circuit includes a voltage integration circuit connected in parallel to an inductive element. The voltage integration circuit is configured to integrate an inductive element current through the inductive element between a first potential at a first end of the inductive element and a second potential a second end of the inductive element. The voltage integration circuit provides a voltage analog of the inductive element current. A voltage current convertor circuit is electrically connected to the voltage integration circuit. The voltage current convertor circuit is configured to convert the voltage analog of the voltage integration circuit to an output current that is proportional to the inductive element current.

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Leander, TX, United States of America

Paul Ranucci