Intel Corporation

Paul R Markworth

Matthew V Metz

Mark L Doczy

Justin K Brask

John P Barnak

A high-K thin film patterning solution is disclosed to address structural and process limitations of conventional patterning techniques. Subsequent to formation of gate structures adjacent a high-K dielectric layer, a portion of the high-K dielectric layer material is reduced, preferably via exposure to hydrogen gas, to form a reduced portion of the high-K dielectric layer. The reduced portion may be selectively removed utilizing wet etch chemistries to leave behind a trench of desirable geometric properties.

Growing community of inventors

Hillsboro, OR, United States of America

Paul R Markworth